Cavity QED photoelectric cell

T. V. Prevenslik, F. G. Shin, Chee Leung Mak

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

The current status in the development program of a cavity QED photoelectric cell is reported. The cell comprises a pair of silicon chips interacting with each other by electromagnetic (EM) radiation through a gap of microscopic dimensions. The gap between the interacting surfaces is less than 100 nm and forms a 1D cavity QED confinement with a resonance in the UV below 200 nm. The cell is driven by the collective EM radiation emitted from the silicon surface that is described by the absorption (and emission) spectrum of the silicon surface. The cell voltage depends on the photoelectric effect caused by the difference between Planck energy at UV frequencies and the work function of silicon whereas the photoelectric current depends on the quantum efficiency of the silicon surface. To compensate for the lowering of temperature of the silicon surface caused by the conversion of Planck energy loss at UV frequencies to free electrons, the cell recharges itself from the thermal energy freely available in the ambient surroundings.
Original languageEnglish
Title of host publicationProceedings of the IEEE Hong Kong Electron Devices Meeting
Pages54-56
Number of pages3
Publication statusPublished - 1 Dec 1999
Event1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) - Shatin, Hong Kong
Duration: 26 Jun 199926 Jun 1999

Conference

Conference1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99)
CountryHong Kong
CityShatin
Period26/06/9926/06/99

ASJC Scopus subject areas

  • Engineering(all)

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