Carbon nanotubes grown on cobalt-containing amorphous carbon composite films

Carbon nanotubes (CNTs) have been produced on silicon wafer by filtered cathodic vacuum arc technique using cobalt-containing graphite targets followed by thermal chemical vapor deposition. The Co-containing amorphous carbon (a-C:Co) composite films have various contents of Co as a catalyst for CNTs growth. It is found that dense and random CNTs were grown on the a-C:Co composite film deposited using a 2 at.% Co-containing graphite target and nanoforest CNTs on the composite films using 5, 10 and 15 at.% Co-containing targets. The nanoforest CNTs using a 15 at.% Co-containing target have very good field emission properties with a low threshold field of 1.6 V/μm and a high and stable current density of 2.1 mA/cm2at 3 V/μm, which may result from the smaller diameter of CNTs. It is found that the field emission properties of the CNTs are significantly affected by the diameter of CNTs rather than its orientation.