Carbon nanotube/copper composites for via filling and thermal management

Yang Chai, Kai Zhang, Min Zhang, Philip Ching Ho Chan, Matthrew M.F. Yuen

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

50 Citations (Scopus)


With excellent current carrying capacity and extremely high thermal conductivity, carbon nanotube (CNT) has been proposed for interconnect and thermal interface material (TIM) applications. In this paper, we present a method of fabricating aligned CNT/copper composites on the silicon substrates and in the silicon dioxide vias. Electrical measurement of the CNT/copper composite vias demonstrates much lower electrical resistance than that of vias with CNT only. Thermal characterization shows the thermal resistance decreased by increasing copper loading into the CNT films. The electroplated copper fills the voids between the neighboring nanotubes. The improvement of the electrical and thermal conductance is resulted from the decreased porosity of the asgrown CNTs. The copper filling increases the contact area between the one-dimensional nanotube and the three-dimensional electrode or heat collector. This mechanically more robust material can sustain more rigorous electrical or thermal stressing cycling. Our results make CNT a step closer to the practical application of CNTs for the on-chip interconnections and thermal management.
Original languageEnglish
Title of host publicationProceedings - 57th Electronic Components and Technology Conference 2007, ECTC '07
Number of pages6
Publication statusPublished - 22 Oct 2007
Externally publishedYes
Event57th Electronic Components and Technology Conference 2007, ECTC '07 - Sparks, NV, United States
Duration: 29 May 20071 Jun 2007


Conference57th Electronic Components and Technology Conference 2007, ECTC '07
Country/TerritoryUnited States
CitySparks, NV

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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