Carbon nanotube thermal interface material for high-brightness light-emitting-diode cooling

K. Zhang; Yang Chai; M. M.F. Yuen; D. G.W. Xiao; Philip Ching Ho Chan

doi:10.1088/0957-4484/19/21/215706

Carbon nanotube thermal interface material for high-brightness light-emitting-diode cooling

K. Zhang, Yang Chai, M. M.F. Yuen, D. G.W. Xiao, Philip Ching Ho Chan

Research output: Journal article publication › Journal article › Academic research › peer-review

152 Citations (Scopus)

Abstract

Aligned carbon nanotube (CNT) arrays were fabricated from a multilayer catalyst configuration by microwave plasma-enhanced chemical vapor deposition (PECVD). The effects of the thickness and annealing of the aluminum layer on the CNT synthesis and thermal performance were investigated. An experimental study of thermal resistance across the CNT array interface using the modified ASTM D5470 standard was conducted. It was demonstrated that the CNT-thermal interface material (CNT-TIM) reduced the thermal interfacial resistance significantly compared with the state-of-art commercial TIM. The optimized thermal resistance of the CNT arrays is as low as 7 mm2K W-1. The light performance of high-brightness light-emitting diode (HB-LED) packages using the aligned CNT-TIM was tested. The results indicated that the light output power was greatly improved with the use of the CNT-TIM. The usage of the CNT-TIM can be also extended to other microelectronics thermal management applications.

Original language	English
Article number	215706
Journal	Nanotechnology
Volume	19
Issue number	21
DOIs	https://doi.org/10.1088/0957-4484/19/21/215706
Publication status	Published - 28 May 2008
Externally published	Yes

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

More information

10.1088/0957-4484/19/21/215706

Cite this

@article{ed1d9b42646f4040a21b7435cf79f515,

title = "Carbon nanotube thermal interface material for high-brightness light-emitting-diode cooling",

abstract = "Aligned carbon nanotube (CNT) arrays were fabricated from a multilayer catalyst configuration by microwave plasma-enhanced chemical vapor deposition (PECVD). The effects of the thickness and annealing of the aluminum layer on the CNT synthesis and thermal performance were investigated. An experimental study of thermal resistance across the CNT array interface using the modified ASTM D5470 standard was conducted. It was demonstrated that the CNT-thermal interface material (CNT-TIM) reduced the thermal interfacial resistance significantly compared with the state-of-art commercial TIM. The optimized thermal resistance of the CNT arrays is as low as 7 mm2K W-1. The light performance of high-brightness light-emitting diode (HB-LED) packages using the aligned CNT-TIM was tested. The results indicated that the light output power was greatly improved with the use of the CNT-TIM. The usage of the CNT-TIM can be also extended to other microelectronics thermal management applications.",

author = "K. Zhang and Yang Chai and Yuen, {M. M.F.} and Xiao, {D. G.W.} and Chan, {Philip Ching Ho}",

year = "2008",

month = may,

day = "28",

doi = "10.1088/0957-4484/19/21/215706",

language = "English",

volume = "19",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "21",

}

TY - JOUR

T1 - Carbon nanotube thermal interface material for high-brightness light-emitting-diode cooling

AU - Zhang, K.

AU - Chai, Yang

AU - Yuen, M. M.F.

AU - Xiao, D. G.W.

AU - Chan, Philip Ching Ho

PY - 2008/5/28

Y1 - 2008/5/28

N2 - Aligned carbon nanotube (CNT) arrays were fabricated from a multilayer catalyst configuration by microwave plasma-enhanced chemical vapor deposition (PECVD). The effects of the thickness and annealing of the aluminum layer on the CNT synthesis and thermal performance were investigated. An experimental study of thermal resistance across the CNT array interface using the modified ASTM D5470 standard was conducted. It was demonstrated that the CNT-thermal interface material (CNT-TIM) reduced the thermal interfacial resistance significantly compared with the state-of-art commercial TIM. The optimized thermal resistance of the CNT arrays is as low as 7 mm2K W-1. The light performance of high-brightness light-emitting diode (HB-LED) packages using the aligned CNT-TIM was tested. The results indicated that the light output power was greatly improved with the use of the CNT-TIM. The usage of the CNT-TIM can be also extended to other microelectronics thermal management applications.

AB - Aligned carbon nanotube (CNT) arrays were fabricated from a multilayer catalyst configuration by microwave plasma-enhanced chemical vapor deposition (PECVD). The effects of the thickness and annealing of the aluminum layer on the CNT synthesis and thermal performance were investigated. An experimental study of thermal resistance across the CNT array interface using the modified ASTM D5470 standard was conducted. It was demonstrated that the CNT-thermal interface material (CNT-TIM) reduced the thermal interfacial resistance significantly compared with the state-of-art commercial TIM. The optimized thermal resistance of the CNT arrays is as low as 7 mm2K W-1. The light performance of high-brightness light-emitting diode (HB-LED) packages using the aligned CNT-TIM was tested. The results indicated that the light output power was greatly improved with the use of the CNT-TIM. The usage of the CNT-TIM can be also extended to other microelectronics thermal management applications.

UR - http://www.scopus.com/inward/record.url?scp=43249126744&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/19/21/215706

DO - 10.1088/0957-4484/19/21/215706

M3 - Journal article

SN - 0957-4484

VL - 19

JO - Nanotechnology

JF - Nanotechnology

IS - 21

M1 - 215706

ER -

Carbon nanotube thermal interface material for high-brightness light-emitting-diode cooling

Abstract

ASJC Scopus subject areas

More information

Other files and links

Fingerprint

Cite this