Carbon nanotube electronics - Materials, devices, circuits, design, modeling, and performance projection

H. S.Philip Wong, Subhasish Mitra, Deji Akinwande, Cara Beasley, Yang Chai, Hong Yu Chen, Xiangyu Chen, Gael Close, Jie Deng, Arash Hazeghi, Jiale Liang, Albert Lin, Luckshitha S. Liyanage, Jieying Luo, Jason Parker, Nishant Patil, Max Shulaker, Hai Wei, Lan Wei, Jie Zhang

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

21 Citations (Scopus)


Three key advances in device technology must be made to realize the potential of carbon nanotube transistors: (1) aligned CNT density of ≥200 CNT/μm on a wafer scale, (2) stable p- and n-type doping on the same wafer with control over the doping level, (3) low resistance metal to CNT contact at short (<20 nm) contact length. CNFET technology has now advanced to a point where large scale circuit level demonstration can be contemplated. This is made possible by advances in wafer-scale CNT growth, multiple CNT transfer, and imperfection-immune design techniques to overcome mis-positioned CNTs [11] and m-CNTs (e.g. VMR [18-19] and ACCNT [27]). In order to minimize CNT-specific variations (e.g. CNT count variations [45]), circuit design techniques co-optimized with process technology will play an important role. In the near future, CNFET circuit performance demonstration at GHz clock speed with the requisite device density is expected.
Original languageEnglish
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
Publication statusPublished - 1 Dec 2011
Externally publishedYes
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: 5 Dec 20117 Dec 2011


Conference2011 IEEE International Electron Devices Meeting, IEDM 2011
Country/TerritoryUnited States
CityWashington, DC

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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