Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?

Zi Bin Chen, Wen Lei, Bin Chen, Yan Bo Wang, Xiao Zhou Liao (Corresponding Author), Hoe H. Tan, Jin Zou, Simon P. Ringer, Chennupati Jagadish

Research output: Journal article publicationJournal articleAcademic researchpeer-review

4 Citations (Scopus)


InAs/GaAs(001) quantum dots grown by droplet epitaxy were investigated using electron microscopy. Misfit dislocations in relaxed InAs/GaAs(001) islands were found to be located approximately 2 nm above the crystalline sample surface, which provides an impression that the misfit dislocations did not form at the island/substrate interface. However, detailed microscopy data analysis indicates that the observation is in fact an artefact caused by the surface oxidation of the material that resulted in substrate surface moving down about 2 nm. As such, caution is needed in explaining the observed interfacial structure.

Original languageEnglish
Article number486
JournalNanoscale Research Letters
Publication statusPublished - 2012
Externally publishedYes


  • Droplet epitaxy
  • Electron microscopy
  • Misfit dislocations
  • Oxidation
  • Quantum dot

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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