TY - JOUR
T1 - Cadmium-Doped Zinc Sulfide Shell as a Hole Injection Springboard for Red, Green, and Blue Quantum Dot Light-Emitting Diodes
AU - Liu, Bochen
AU - Guo, Yue
AU - Su, Qiang
AU - Zhan, Yunfeng
AU - Chen, Zhao
AU - Li, Yang
AU - You, Baogui
AU - Dong, Xiaonan
AU - Chen, Shuming
AU - Wong, Wai Yeung
N1 - Funding Information:
B.L. and Y.G. contributed equally to this work. Z.C. thanks the National Natural Science Foundation of China (No. 21901190), the Key‐Area Research and Development Program of Guangdong Province (No. 2020B010174004), the College Innovation Team Project of Guangdong Province (2021KCXTD042), the Guangdong Basic and Applied Basic Research Foundation (Nos. 2019A1515111201, 2019A1515110778), the Science and Technology Planning Project of Guangdong Province (2020B0101030008), the Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Project Program (2021ZZ201), and Key Laboratory of Optoelectronic materials and Applications in Guangdong Higher Education (No. 2017KSYS011) for the financial support. W.‐Y.W. thanks the Hong Kong Research Grants Council (PolyU 153062/18P), the Guangdong‐Hong Kong‐Macao Joint Laboratory for Photonic‐Thermal‐Electrical Energy Materials and Devices (2019B121205001), the National Natural Science Foundation of China (No. 52073242), the CAS‐Croucher Funding Scheme for Joint Laboratories, the ITC Guangdong‐Hong Kong Technology Cooperation Funding Scheme (TCFS) (GHP/038/19GD), the Hong Kong Polytechnic University (1‐ZE1C), Research Institute for Smart Energy (RISE), and the Endowed Professorship in Energy from Miss Clarea Au (847S) for the financial support.
Funding Information:
B.L. and Y.G. contributed equally to this work. Z.C. thanks the National Natural Science Foundation of China (No. 21901190), the Key-Area Research and Development Program of Guangdong Province (No. 2020B010174004), the College Innovation Team Project of Guangdong Province (2021KCXTD042), the Guangdong Basic and Applied Basic Research Foundation (Nos. 2019A1515111201, 2019A1515110778), the Science and Technology Planning Project of Guangdong Province (2020B0101030008), the Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Project Program (2021ZZ201), and Key Laboratory of Optoelectronic materials and Applications in Guangdong Higher Education (No. 2017KSYS011) for the financial support. W.-Y.W. thanks the Hong Kong Research Grants Council (PolyU 153062/18P), the Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices (2019B121205001), the National Natural Science Foundation of China (No. 52073242), the CAS-Croucher Funding Scheme for Joint Laboratories, the ITC Guangdong-Hong Kong Technology Cooperation Funding Scheme (TCFS) (GHP/038/19GD), the Hong Kong Polytechnic University (1-ZE1C), Research Institute for Smart Energy (RISE), and the Endowed Professorship in Energy from Miss Clarea Au (847S) for the financial support.
Publisher Copyright:
© 2022 The Authors. Advanced Science published by Wiley-VCH GmbH.
PY - 2022/3/3
Y1 - 2022/3/3
N2 - A new strategy is developed in which cadmium-doped zinc sulfide (CdZnS) is used as the outermost shell to synthesize red, green, and blue (RGB) quantum dots (QDs) with the core/shell structures of CdZnSe/ZnSe/ZnS/CdZnS, CdZnSe/ZnSe/ZnSeS/CdZnS, and CdZnSe/ZnSeS/ZnS/CdZnS, respectively. Firstly, the inner ZnS and ZnSe shells confine the excitons inside the cores of QDs and provide a better lattice matching with respect to the outermost shell, which ensures high photoluminescence quantum yields of QDs. Secondly, the CdZnS shell affords its QDs with shallow valence bands (VBs). Therefore, the CdZnS shell could be used as a springboard, which decreases the energy barrier for hole injection from polymers to QDs to be below 1.0 eV. It makes the holes to be easily injected into the QD EMLs and enables a balanced recombination of charge carriers in quantum dot light-emitting diodes (QLEDs). Thirdly, the RGB QLEDs made by these new QDs exhibit peak external quantum efficiencies (EQEs) of 20.2%, 19.2%, and 8.4%, respectively. In addition, the QLEDs exhibit unexpected luminance values at low applied voltages and therefore high power efficiencies. From these results, it is evident that CdZnS could act as an excellent shell and hole injection springboard to afford high performance QLEDs.
AB - A new strategy is developed in which cadmium-doped zinc sulfide (CdZnS) is used as the outermost shell to synthesize red, green, and blue (RGB) quantum dots (QDs) with the core/shell structures of CdZnSe/ZnSe/ZnS/CdZnS, CdZnSe/ZnSe/ZnSeS/CdZnS, and CdZnSe/ZnSeS/ZnS/CdZnS, respectively. Firstly, the inner ZnS and ZnSe shells confine the excitons inside the cores of QDs and provide a better lattice matching with respect to the outermost shell, which ensures high photoluminescence quantum yields of QDs. Secondly, the CdZnS shell affords its QDs with shallow valence bands (VBs). Therefore, the CdZnS shell could be used as a springboard, which decreases the energy barrier for hole injection from polymers to QDs to be below 1.0 eV. It makes the holes to be easily injected into the QD EMLs and enables a balanced recombination of charge carriers in quantum dot light-emitting diodes (QLEDs). Thirdly, the RGB QLEDs made by these new QDs exhibit peak external quantum efficiencies (EQEs) of 20.2%, 19.2%, and 8.4%, respectively. In addition, the QLEDs exhibit unexpected luminance values at low applied voltages and therefore high power efficiencies. From these results, it is evident that CdZnS could act as an excellent shell and hole injection springboard to afford high performance QLEDs.
KW - balanced charge carriers
KW - efficient quantum dot light-emitting diodes
KW - high photoluminescence quantum yields
KW - hole injection springboard
KW - outermost CdZnS shell
UR - http://www.scopus.com/inward/record.url?scp=85125536702&partnerID=8YFLogxK
U2 - 10.1002/advs.202104488
DO - 10.1002/advs.202104488
M3 - Journal article
AN - SCOPUS:85125536702
SN - 2198-3844
VL - 9
JO - Advanced Science
JF - Advanced Science
IS - 15
M1 - 2104488
ER -