Buried Interface Passivation of Sn–Pb Narrow-Bandgap Perovskite for Highly Efficient All-Perovskite Tandem Solar Cells

Jin Zhang, Weisheng Li, Xiaojing Lv, Yitong Ji, Wenchao Huang, Tongle Bu, Zhiwei Ren, Canglang Yao, Fuzhi Huang, Yi Bing Cheng, Jinhui Tong

Research output: Journal article publicationJournal articleAcademic researchpeer-review

Abstract

All-perovskite tandem solar cells (ATSCs) present a remarkable opportunity to overcome the Shockley–Queisser efficiency limit of single-junction solar cells. However, the stability of ATSCs significantly lags that of their pure Pb-based single-junction counterparts. Recent studies have identified that the widely used poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) hole transport layer in narrow-bandgap (NBG) tin–lead (Sn–Pb) perovskite solar cells (PSCs) hinders the efficiency and stability. Herein, a patching strategy to optimize the interface between perovskite and PEDOT:PSS is proposed. Both theoretical and experimental studies reveal that PenA+ and Ac can decrease defect states at the interface and strengthen the binding between PEDOT:PSS and Sn–Pb perovskite. Furthermore, the pentylammonium acetate (PenAAc) interlayer improves carrier extraction and suppresses the oxidation of Sn2+ to Sn4+. With the PenAAc buried layer, the fabricated NBG PSCs obtain an impressive power conversion efficiency (PCE) of 21.86%, along with significantly enhanced device stability. By integrating the buried passivated NBG Sn–Pb perovskite with a 1.75 eV wide-bandgap PSC, the two-terminal ATSC achieves a PCE of 26.54%. This work provides a valuable approach to fabricate efficient and stable NBG PSCs.

Original languageEnglish
Article number2400184
JournalSolar RRL
DOIs
Publication statusPublished - May 2024

Keywords

  • all-perovskite tandem solar cells
  • buried interface
  • stability
  • tin–lead mixed perovskite

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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