Blue light electroluminescence from doped μc-SiC prepared by excimer (ArF) laser crystallisation

Shu Ping Lau, J. M. Marshall, T. E. Dyer, A. R. Hepburn, J. F. Davies

Research output: Journal article publicationConference articleAcademic researchpeer-review

2 Citations (Scopus)


A novel method has been developed to prepare highly conductive and wide band gap doped (B2H6/PH3) microcrystalline silicon carbide (μc-SiC) by excimer (ArF) laser crystallisation. Doped a-SiC:H films were prepared by Plasma Enhanced Chemical Vapour Deposition (PECVD), both with and without H2 dilution. After crystallisation, this material has Tauc gap of around 2.0 eV and exhibits a dark conductivity as high as 20 (Ωcm)-1, more than ten orders of magnitude higher than before the laser irradiation. This is shown to be mainly due to the formation of SiC microcrystallites in the laser crystallised a-SiC:H. In this paper, we report that this material can be utilised not only as the carrier injection layer in a-SiC:H based Thin Film Light Emitting Diodes (TFLEDs) but also as a luminescent layer. Blue light emission has been observed from a laser crystallised (LC) doped μc-SiC based electroluminescent device, the peak wavelength is around 490nm. The simplicity of excimer (ArF) laser crystallisation and its capability to fabricate poly-Si TFTs, makes this a promising novel method to realise fully integrated Si large area multi-colour displays.
Original languageEnglish
Pages (from-to)647-652
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1 Dec 1994
Externally publishedYes
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, United States
Duration: 4 Apr 19948 Apr 1994

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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