Abstract
A simple methyl-terminated (-CH3) surface passivation approach has been employed to enhance the performance of the bilayer graphene/Si nanohole array (BLG/SiNH array) Schottky junction based self-powered near infrared photodetector (SPNIRPD). The as-fabricated SPNIRPD exhibits high sensitivity to light at near infrared region at zero bias voltage. The Ilight/Idarkratio measured is 1.43 × 107, which is more than an order of magnitude improvement compared with the sample without passivation (∼6.4 × 1051). Its corresponding responsivity and detectivity are 0.328 AW-1and 6.03 × 1013cmHz1/2W-1, respectively. The demonstrated results have confirmed the high-performance SPNIRPD compared with the photodetectors of similar type and its great potential application in future optoelectronic devices.
Original language | English |
---|---|
Pages (from-to) | 4839-4846 |
Number of pages | 8 |
Journal | Optics Express |
Volume | 23 |
Issue number | 4 |
DOIs | |
Publication status | Published - 1 Jan 2015 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics