Bias stress stability improvement in solution-processed low-voltage organic field-effect transistors using relaxor ferroelectric polymer gate dielectric

Wei Tang, Jiaqing Zhao, Yukun Huang, Li Ding, Qiaofeng Li, Jinhua Li, Peng You, Feng Yan, Xiaojun Guo

Research output: Journal article publicationJournal articleAcademic researchpeer-review

29 Citations (Scopus)


Low-voltage organic-field effect transistors (OFETs) using relaxor ferroelectric polymer poly (vinylidene fluoridetrifluoroethylene-chlorofloroethylene) P (VDF-TrFE-CFE)) were fabricated. The measured hysteresis loop and the threshold voltage shift under negative bias stress (NBS) are opposite to that of the reference device using low-κ CYTOP gate dielectric layer, in which the hysteresis and NBS-induced instabilities are explained by gate bias-induced charge trapping. The anomalous behaviors in the P (VDF-TrFE-CFE) OFETs are attributed to the stress-induced remnant polarization in P (VDF-TrFE-CFE),which induces additionalmobile charges into the channel. By adding a thin CYTOP layer between the P (VDF-TrFE-CFE) layer and the semiconductor layer, the two effects of charge trapping and remnant polarization under gate bias are found to be neutralized with each other, resulting in low-voltage OFETs of negligible hysteresis and excellent NBS stability.
Original languageEnglish
Article number7907289
Pages (from-to)748-751
Number of pages4
JournalIEEE Electron Device Letters
Issue number6
Publication statusPublished - 1 Jun 2017


  • high-κ
  • low voltage
  • Organic field-effect transistor(OFET)
  • solution processed
  • stability.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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