Bandgap Engineering of Ternary ε-InSe_1−xS_x and ε-InSe_1−yTe_y Single Crystals for High-Performance Electronics and Optoelectronics

Keyphrases

• Band Gap 100%
• Single Crystal 100%
• Bandgap Engineering 100%
• High-performance Electronics 100%
• Structural Integrity 50%
• Silica 50%
• Two Dimensional 50%
• Crystalline Structure 50%
• Raman Spectra 50%
• Optical Properties 50%
• Alloy Composition 50%
• Dielectric Substrate 50%
• Photoluminescence Spectra 50%
• High Current 50%
• Photodetector 50%
• Density Functional Calculations 50%
• Field-effect Transistors 50%
• Field-effect Mobility 50%
• Photoresponse 50%
• Band Broadening 50%
• Efficient Strategy 50%
• Tunable Band Gap 50%
• Promising Applications 50%
• Polymorph 50%
• Photoresponsivity 50%
• On-off Ratio 50%
• 2D Layered Materials 50%
• InSe 50%
• Single-crystalline 50%
• Applications in Electronics 50%

Material Science

• Alloying 100%
• Single Crystal 100%
• Photoluminescence 33%
• Field Effect Transistors 33%
• Photosensor 33%
• Layered Material 33%
• Density 33%
• Optical Property 33%
• Crystal Structure 33%
• Dielectric Material 33%