Attraction of semiconductor nanowires: An in situ observation

Bin Chen (Corresponding Author), Qiang Gao, Li Chang, Yanbo Wang, Zibin Chen, Xiaozhou Liao (Corresponding Author), Hark Hoe Tan, Jin Zou, Simon P. Ringer, Chennupati Jagadish

Research output: Journal article publicationJournal articleAcademic researchpeer-review

10 Citations (Scopus)


In situ deformation transmission electron microscopy was used to study the attraction behavior of GaAs semiconductor nanowires (NWs). The NWs demonstrated an interesting phenomenon of either head-to-head or body-to-body attraction at distances that depend on the NW diameters. The NWs with a diameter of ∼25 nm attracted at a distance of ∼25 nm, while large-diameter NWs of ∼55 nm showed no obvious attraction. The underlying mechanism governing the attraction of the NWs is proposed and discussed with a mechanistic model. The diameter dependence on the NW attraction behavior is discussed. The finding provides an understanding of the Ampère force in nanostructured materials caused by an electron-beam-induced current while technologically it provides useful hints for designing NW-based devices according to the diameter-dependent attraction behavior of NWs.

Original languageEnglish
Pages (from-to)7166-7172
Number of pages7
JournalActa Materialia
Issue number19
Publication statusPublished - Nov 2013
Externally publishedYes


  • Ampère force
  • Attraction
  • Diameter dependence
  • Electron-beam-induced current
  • GaAs nanowires

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Polymers and Plastics
  • Metals and Alloys


Dive into the research topics of 'Attraction of semiconductor nanowires: An in situ observation'. Together they form a unique fingerprint.

Cite this