Attraction of semiconductor nanowires: An in situ observation

Bin Chen (Corresponding Author), Qiang Gao, Li Chang, Yanbo Wang, Zibin Chen, Xiaozhou Liao (Corresponding Author), Hark Hoe Tan, Jin Zou, Simon P. Ringer, Chennupati Jagadish

Research output: Journal article publicationJournal articleAcademic researchpeer-review

9 Citations (Scopus)


In situ deformation transmission electron microscopy was used to study the attraction behavior of GaAs semiconductor nanowires (NWs). The NWs demonstrated an interesting phenomenon of either head-to-head or body-to-body attraction at distances that depend on the NW diameters. The NWs with a diameter of ∼25 nm attracted at a distance of ∼25 nm, while large-diameter NWs of ∼55 nm showed no obvious attraction. The underlying mechanism governing the attraction of the NWs is proposed and discussed with a mechanistic model. The diameter dependence on the NW attraction behavior is discussed. The finding provides an understanding of the Ampère force in nanostructured materials caused by an electron-beam-induced current while technologically it provides useful hints for designing NW-based devices according to the diameter-dependent attraction behavior of NWs.

Original languageEnglish
Pages (from-to)7166-7172
Number of pages7
JournalActa Materialia
Issue number19
Publication statusPublished - Nov 2013
Externally publishedYes


  • Ampère force
  • Attraction
  • Diameter dependence
  • Electron-beam-induced current
  • GaAs nanowires

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Polymers and Plastics
  • Metals and Alloys

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