Atomically precise interfaces from non-stoichiometric deposition

Y. F. Nie, Ye Zhu, C. H. Lee, L. F. Kourkoutis, J. A. Mundy, J. Junquera, Ph Ghosez, D. J. Baek, S. Sung, X. X. Xi, K. M. Shen, D. A. Muller, D. G. Schlom

Research output: Journal article publicationJournal articleAcademic researchpeer-review

64 Citations (Scopus)

Abstract

Complex oxide heterostructures display some of the most chemically abrupt, atomically precise interfaces, which is advantageous when constructing new interface phases with emergent properties by juxtaposing incompatible ground states. One might assume that atomically precise interfaces result from stoichiometric growth. Here we show that the most precise control is, however, obtained by using deliberate and specific non-stoichiometric growth conditions. For the precise growth of Sr n+1 Ti n O n+1 Ruddlesden-Popper (RP) phases, stoichiometric deposition leads to the loss of the first RP rock-salt double layer, but growing with a strontium-rich surface layer restores the bulk stoichiometry and ordering of the subsurface RP structure. Our results dramatically expand the materials that can be prepared in epitaxial heterostructures with precise interface control-from just the n=â ̂end members (perovskites) to the entire RP homologous series-enabling the exploration of novel quantum phenomena at a richer variety of oxide interfaces.
Original languageEnglish
Article number4530
JournalNature Communications
Volume5
DOIs
Publication statusPublished - 4 Aug 2014
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

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