TY - JOUR
T1 - Atomic simulation of crystal orientation and workpiece composition effect on nano-scratching of SiGe alloy
AU - Liu, Changlin
AU - To, Suet
AU - Sheng, Xuexiang
AU - Wang, Ruoxin
AU - Xu, Jianfeng
N1 - Funding Information:
The work described in this paper was partially supported by the Research Grants Council of the Hong Kong Special Administrative Region, China (Project No.: PolyU 15221322); the major project of National Natural Science Foundation of China (Project No. U19A20104); the Shenzhen Science and Technology Program (Project No.: JCYJ20210324131214039); the authors would like to thank the financial support from the State Key Laboratory of Ultra-precision Machining Technology and the Research Committee of The Hong Kong Polytechnic University.
Publisher Copyright:
© 2023, The Author(s).
PY - 2023/6/26
Y1 - 2023/6/26
N2 - Silicon–germanium (SiGe) alloy is a new semiconductor material of great interest in thermoelectric devices, optoelectronic devices, infrared detectors, and semiconductor industry. In the present work, molecular dynamics simulation was conducted to investigate the deformation behavior in nano-scratching of SiGe alloy. The effect of scratching direction and Ge composition on material removal mechanism was discussed, aiming to understand the nanoscale deformation mechanism of SiGe alloy. The simulation results indicate that the machining direction and Ge composition have significant influences on the atomic flow and chip formation during nano-scratching. Besides, less subsurface damage and elastic recovery are observed when scratching along the (011)[100] direction with higher Ge composition. The highest crystal purity of the machined surface is achieved when scratching on the Si60Ge40 workpiece. Furthermore, the Ge composition has a significant influence on the workpiece temperature due to the variation of the thermal conductivity of the workpiece. This work could enrich the understanding of the deformation mechanism of SiGe alloy during nanoscale machining and open a potential to improve the machining performance of multicomponent semiconductor materials.
AB - Silicon–germanium (SiGe) alloy is a new semiconductor material of great interest in thermoelectric devices, optoelectronic devices, infrared detectors, and semiconductor industry. In the present work, molecular dynamics simulation was conducted to investigate the deformation behavior in nano-scratching of SiGe alloy. The effect of scratching direction and Ge composition on material removal mechanism was discussed, aiming to understand the nanoscale deformation mechanism of SiGe alloy. The simulation results indicate that the machining direction and Ge composition have significant influences on the atomic flow and chip formation during nano-scratching. Besides, less subsurface damage and elastic recovery are observed when scratching along the (011)[100] direction with higher Ge composition. The highest crystal purity of the machined surface is achieved when scratching on the Si60Ge40 workpiece. Furthermore, the Ge composition has a significant influence on the workpiece temperature due to the variation of the thermal conductivity of the workpiece. This work could enrich the understanding of the deformation mechanism of SiGe alloy during nanoscale machining and open a potential to improve the machining performance of multicomponent semiconductor materials.
KW - Molecular dynamics simulation
KW - Nano-scratching process
KW - Silicon–germanium alloy
KW - Subsurface damage
UR - http://www.scopus.com/inward/record.url?scp=85163326270&partnerID=8YFLogxK
U2 - 10.1186/s11671-023-03859-9
DO - 10.1186/s11671-023-03859-9
M3 - Journal article
AN - SCOPUS:85163326270
SN - 2731-9229
VL - 18
JO - Discover Nano
JF - Discover Nano
IS - 1
M1 - 91
ER -