Abstract
The kinetic surface roughening of TiN thin films sputter-deposited on silicon substrates at room temperature was studied. Scaling analyses were made by surface measurements of atomic force microscopy (AFM). The roughness exponent α and growth exponent β that characterize scaling behaviors of surface growth were calculated using the height-height correlation function H(r) and power spectra P(f). The exponent values of α=∼0.98 and β=∼0.28 indicated that the surface growth behavior of sputtered TiN thin films could be adequately explained by a simple linear growth model showing surface diffusion as a smoothing effect and shot noise as a roughening mechanism. An inverse Fourier transformation technique was also used to generate the evolution of theoretical surface profiles that showed good agreement with AFM measurements.
Original language | English |
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Pages (from-to) | 3559-3563 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 92 |
Issue number | 7 |
DOIs | |
Publication status | Published - 1 Oct 2002 |
Externally published | Yes |
ASJC Scopus subject areas
- General Physics and Astronomy