Application of contact-level ion-beam induced passive voltage contrast in failure analysis of static random access memory

Z. G. Song, G. Qian, Jiyan Dai, Z. R. Guo, S. K. Loh, C. S. Teh, S. Redkar

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

16 Citations (Scopus)

Abstract

A novel technique of contact-level ion-beam induced passive voltage contrast was developed to identify defective contact employing a FIB station. The technique was demonstrated to be effective by the analysis of the single column, double column, single bit and pair bit failures of SRAM. Subsequent FIB cross-section and TEM analysis revealed the root causes of the failures.
Original languageEnglish
Title of host publicationProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Pages103-106
Number of pages4
Publication statusPublished - 1 Jan 2001
Externally publishedYes
Event8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001) - Singapure, Singapore
Duration: 9 Jul 200113 Jul 2001

Conference

Conference8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001)
CountrySingapore
CitySingapure
Period9/07/0113/07/01

ASJC Scopus subject areas

  • Engineering(all)

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