Application of contact-level ion-beam induced passive voltage contrast in failure analysis of static random access memory

Z. G. Song; G. Qian; Jiyan Dai; Z. R. Guo; S. K. Loh; C. S. Teh; S. Redkar

Application of contact-level ion-beam induced passive voltage contrast in failure analysis of static random access memory

Z. G. Song, G. Qian, Jiyan Dai, Z. R. Guo, S. K. Loh, C. S. Teh, S. Redkar

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

18 Citations (Scopus)

Abstract

A novel technique of contact-level ion-beam induced passive voltage contrast was developed to identify defective contact employing a FIB station. The technique was demonstrated to be effective by the analysis of the single column, double column, single bit and pair bit failures of SRAM. Subsequent FIB cross-section and TEM analysis revealed the root causes of the failures.

Original language	English
Title of host publication	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Pages	103-106
Number of pages	4
Publication status	Published - 1 Jan 2001
Externally published	Yes
Event	8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001) - Singapure, Singapore Duration: 9 Jul 2001 → 13 Jul 2001

Conference

Conference	8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001)
Country/Territory	Singapore
City	Singapure
Period	9/07/01 → 13/07/01

ASJC Scopus subject areas

General Engineering

Cite this

@inproceedings{8f765d60f8a541f483cbf7245f221e7e,

title = "Application of contact-level ion-beam induced passive voltage contrast in failure analysis of static random access memory",

abstract = "A novel technique of contact-level ion-beam induced passive voltage contrast was developed to identify defective contact employing a FIB station. The technique was demonstrated to be effective by the analysis of the single column, double column, single bit and pair bit failures of SRAM. Subsequent FIB cross-section and TEM analysis revealed the root causes of the failures.",

author = "Song, {Z. G.} and G. Qian and Jiyan Dai and Guo, {Z. R.} and Loh, {S. K.} and Teh, {C. S.} and S. Redkar",

year = "2001",

month = jan,

day = "1",

language = "English",

pages = "103--106",

booktitle = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

note = "8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001) ; Conference date: 09-07-2001 Through 13-07-2001",

}

Song, ZG, Qian, G, Dai, J, Guo, ZR, Loh, SK, Teh, CS & Redkar, S 2001, Application of contact-level ion-beam induced passive voltage contrast in failure analysis of static random access memory. in Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA. pp. 103-106, 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001), Singapure, Singapore, 9/07/01.

Application of contact-level ion-beam induced passive voltage contrast in failure analysis of static random access memory. / Song, Z. G.; Qian, G.; Dai, Jiyan et al.
Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA. 2001. p. 103-106.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - Application of contact-level ion-beam induced passive voltage contrast in failure analysis of static random access memory

AU - Song, Z. G.

AU - Qian, G.

AU - Dai, Jiyan

AU - Guo, Z. R.

AU - Loh, S. K.

AU - Teh, C. S.

AU - Redkar, S.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - A novel technique of contact-level ion-beam induced passive voltage contrast was developed to identify defective contact employing a FIB station. The technique was demonstrated to be effective by the analysis of the single column, double column, single bit and pair bit failures of SRAM. Subsequent FIB cross-section and TEM analysis revealed the root causes of the failures.

AB - A novel technique of contact-level ion-beam induced passive voltage contrast was developed to identify defective contact employing a FIB station. The technique was demonstrated to be effective by the analysis of the single column, double column, single bit and pair bit failures of SRAM. Subsequent FIB cross-section and TEM analysis revealed the root causes of the failures.

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M3 - Conference article published in proceeding or book

SP - 103

EP - 106

BT - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

T2 - 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001)

Y2 - 9 July 2001 through 13 July 2001

ER -

Application of contact-level ion-beam induced passive voltage contrast in failure analysis of static random access memory

Abstract

Conference

ASJC Scopus subject areas

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