Abstract
Tin mono-sulfide (SnS) thin films have been grown by molecular beam epitaxy (MBE) on two different substrates, GaAs (100) and soda lime glass at 400°C. High resolution X-ray Diffraction (HXRD) and Scanning Electron Microscopy (SEM) are used to characterize the structural properties of the as grown SnS films. By introducing a graphene buffer layer between the SnS thin film and the substrate, the XRD rocking curve's full width at half maximum (FWHM) of the SnS film grown on GaAs (100) and soda lime glass decrease from 2.92°to 0.37°and from 6.58°to 2.04°respectively, indicating a significant improvement of SnS thin films.
Original language | English |
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Title of host publication | Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012 |
Pages | 2614-2616 |
Number of pages | 3 |
DOIs | |
Publication status | Published - 26 Nov 2012 |
Event | 38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States Duration: 3 Jun 2012 → 8 Jun 2012 |
Conference
Conference | 38th IEEE Photovoltaic Specialists Conference, PVSC 2012 |
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Country/Territory | United States |
City | Austin, TX |
Period | 3/06/12 → 8/06/12 |
Keywords
- Gallium arsenide
- graphene
- molecular beam epitaxy
- scanning electron microscopy
- X-ray diffraction
ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering