Angled broad-area semiconductor lasers to emit high output power with good beam quality

Yi Shin Su, Chih Hung Tsai, Chia Wei Tsai, D. P. Tsai, Ching Fuh Lin

Research output: Journal article publicationConference articleAcademic researchpeer-review


A new type of laser diodes with good beam quality is introduced. The far-field divergence angle can be close to diffraction-limited value. In the new design, the direction of the waveguide on a broad area Fabry-Perot laser diode is tilted at an angle from the facet normal. This design is called "angled broad area laser diode". In this tilted waveguide device, filamentation is not observed. The far-field divergence angle is generally within 5 times the diffraction-limited value. This tilted broad area laser is advantageous over the angled grating DFB laser because the difficulty of matching the grating period with peak gain wavelength is avoided.

Original languageEnglish
Pages (from-to)133-141
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - Jan 2004
Externally publishedYes
EventNovel In-Plane Semiconductor Lasers III - San Jose, CA, United States
Duration: 26 Jan 200428 Jan 2004


  • Angled broad area laser
  • Angled grating dfb laser
  • Filamentation
  • High power laser diode
  • Indium phosphide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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