Anelastic behavior in GaAs semiconductor nanowires

Bin Chen; Qiang Gao; Yanbo Wang; Xiaozhou Liao; Yiu Wing Mai; Hark Hoe Tan; Jin Zou; Simon P. Ringer; Chennupati Jagadish

doi:10.1021/nl401175t

Anelastic behavior in GaAs semiconductor nanowires

Bin Chen, Qiang Gao, Yanbo Wang, Xiaozhou Liao, Yiu Wing Mai, Hark Hoe Tan, Jin Zou, Simon P. Ringer, Chennupati Jagadish

Research output: Journal article publication › Journal article › Academic research › peer-review

38 Citations (Scopus)

Abstract

The mechanical behavior of vertically aligned single-crystal GaAs nanowires grown on GaAs(111)_B surface was investigated using in situ deformation transmission electron microscopy. Anelasticity was observed in nanowires with small diameters and the anelastic behavior was affected by the crystalline defects in the nanowires. The underlying mechanism for the observed anelasticity is discussed. The finding opens up the prospect of using nanowire materials for nanoscale damping applications.

Original language	English
Pages (from-to)	3169-3172
Number of pages	4
Journal	Nano Letters
Volume	13
Issue number	7
DOIs	https://doi.org/10.1021/nl401175t
Publication status	Published - 10 Jul 2013
Externally published	Yes

Keywords

Anelasticity
crystalline defects
GaAs nanowires
in situ deformation
transmission electron microscopy

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl401175t

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@article{a4b938bf50ac4847b0e6907957af6d4c,

title = "Anelastic behavior in GaAs semiconductor nanowires",

abstract = "The mechanical behavior of vertically aligned single-crystal GaAs nanowires grown on GaAs(111)B surface was investigated using in situ deformation transmission electron microscopy. Anelasticity was observed in nanowires with small diameters and the anelastic behavior was affected by the crystalline defects in the nanowires. The underlying mechanism for the observed anelasticity is discussed. The finding opens up the prospect of using nanowire materials for nanoscale damping applications.",

keywords = "Anelasticity, crystalline defects, GaAs nanowires, in situ deformation, transmission electron microscopy",

author = "Bin Chen and Qiang Gao and Yanbo Wang and Xiaozhou Liao and Mai, {Yiu Wing} and Tan, {Hark Hoe} and Jin Zou and Ringer, {Simon P.} and Chennupati Jagadish",

year = "2013",

month = jul,

day = "10",

doi = "10.1021/nl401175t",

language = "English",

volume = "13",

pages = "3169--3172",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "7",

}

TY - JOUR

T1 - Anelastic behavior in GaAs semiconductor nanowires

AU - Chen, Bin

AU - Gao, Qiang

AU - Wang, Yanbo

AU - Liao, Xiaozhou

AU - Mai, Yiu Wing

AU - Tan, Hark Hoe

AU - Zou, Jin

AU - Ringer, Simon P.

AU - Jagadish, Chennupati

PY - 2013/7/10

Y1 - 2013/7/10

N2 - The mechanical behavior of vertically aligned single-crystal GaAs nanowires grown on GaAs(111)B surface was investigated using in situ deformation transmission electron microscopy. Anelasticity was observed in nanowires with small diameters and the anelastic behavior was affected by the crystalline defects in the nanowires. The underlying mechanism for the observed anelasticity is discussed. The finding opens up the prospect of using nanowire materials for nanoscale damping applications.

AB - The mechanical behavior of vertically aligned single-crystal GaAs nanowires grown on GaAs(111)B surface was investigated using in situ deformation transmission electron microscopy. Anelasticity was observed in nanowires with small diameters and the anelastic behavior was affected by the crystalline defects in the nanowires. The underlying mechanism for the observed anelasticity is discussed. The finding opens up the prospect of using nanowire materials for nanoscale damping applications.

KW - Anelasticity

KW - crystalline defects

KW - GaAs nanowires

KW - in situ deformation

KW - transmission electron microscopy

UR - http://www.scopus.com/inward/record.url?scp=84880149883&partnerID=8YFLogxK

U2 - 10.1021/nl401175t

DO - 10.1021/nl401175t

M3 - Journal article

AN - SCOPUS:84880149883

SN - 1530-6984

VL - 13

SP - 3169

EP - 3172

JO - Nano Letters

JF - Nano Letters

IS - 7

ER -

Anelastic behavior in GaAs semiconductor nanowires

Abstract

Keywords

ASJC Scopus subject areas

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