Analytical modeling of nonideal Schottky diode with series and shunt resistance and application in hydrogen gas sensors

Y. Liu, Wing Man Tang, P. T. Lai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

1 Citation (Scopus)

Abstract

KGaA, Weinheim This work proposes a method for extracting the barrier height, ideality factor, series, and shunt resistances of Schottky diodes with high accuracy and consistency. By defining the voltage boundaries for the three regions of the current–voltage curve that are controlled by shunt resistance, thermal emission, and series resistance, respectively, the method can avoid the problems of traditional methods through nonlinear fitting and iterations. The application on Schottky-diode-type hydrogen sensor with a structure of Pd/WO3/SiC reveals excellent agreement between the extracted voltage boundaries and the turning points on the current–voltage curve under different temperatures and hydrogen concentrations. The average mean-squared error of the model current–voltage data vs. experimental data is 0.371, more than five times smaller than that of traditional methods based on least-squares linear regression.
Original languageEnglish
Pages (from-to)2764-2768
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume213
Issue number10
DOIs
Publication statusPublished - 1 Oct 2016

Keywords

  • hydrogen sensor
  • modeling
  • Pd/WO /SiC 3
  • resistance
  • Schottky diode
  • silicon carbide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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