Analysis and Design of an X-band Stacked-FET Power Amplifier with Large Bandwidth

Haibo Hu, Shichang Chen, Jialin Cai, Kuiwen Xu, Gaofeng Wang, Xinyu Zhou

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

This paper proposes a broadband power amplifier (PA) based on stacked-FET structure. Compared with the traditional power amplifier in a parallel configuration, the proposed PA has relatively large equivalent output impedance, better output matching capability, and higher output power. For the same metric, stacked-FET PA can achieve reduced size and larger bandwidth, saving valuable chip area. This stacked-FET PA is fabricated using a 0.25 μm GaAs pHEMT process, and the simulation result shows that it achieves a saturated output power of more than 36.5 dBm, typically up to 37.2 dBm, with a maximum power-added efficiency (PAE) of more than 44% from 7.5 to 11.2 GHz.

Original languageEnglish
Title of host publication2023 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-3
Number of pages3
ISBN (Electronic)9798350338874
DOIs
Publication statusPublished - May 2023
Event15th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023 - Qingdao, China
Duration: 14 May 202317 May 2023

Publication series

Name2023 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023 - Proceedings

Conference

Conference15th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023
Country/TerritoryChina
CityQingdao
Period14/05/2317/05/23

Keywords

  • Broadband
  • GaAs pHEMT
  • MMIC
  • power amplifier(PA)
  • stacked-FET

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Instrumentation
  • Radiation

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