TY - JOUR
T1 - An Online Gate Oxide Degradation Monitoring Method for SiC MOSFETs Based on Turn-ON Gate Current Change Rate
AU - Meng, Hui
AU - Liu, Junwei
AU - Zhang, Yi
AU - Chung, Chiyung
N1 - Publisher Copyright:
© 1986-2012 IEEE.
PY - 2025/5
Y1 - 2025/5
N2 - Gate oxide degradation (GOD) presents a reliability issue for silicon carbide (SiC) metal-oxide-semiconductor fieldeffect transistors (MOSFETs), especially under high-temperature and high-electric-field conditions. This letter proposes an online condition monitoring (CM) method based on the peak value of the turn-on gate current change rate (dig/dt,max). The technique utilizes a non-invasive PCB Rogowski coil to measure dig/dt,max, demonstrating high practicality. Accelerated aging tests under positive and negative high-temperature gate bias (HTGB) and hightemperature gate switching (HTGS) conditions reveal correlations between dig/dt,max and GOD, with variations of 5.61%, 5% and 8.33%, after 160 hours of aging. Double pulse test (DPT) results indicate that dig/dt,max is independent of external factors such as temperature, drain-source voltage (Vds), drain current (Ids) and package aging. Results from a buck converter further validate the feasibility of long-term online monitoring.
AB - Gate oxide degradation (GOD) presents a reliability issue for silicon carbide (SiC) metal-oxide-semiconductor fieldeffect transistors (MOSFETs), especially under high-temperature and high-electric-field conditions. This letter proposes an online condition monitoring (CM) method based on the peak value of the turn-on gate current change rate (dig/dt,max). The technique utilizes a non-invasive PCB Rogowski coil to measure dig/dt,max, demonstrating high practicality. Accelerated aging tests under positive and negative high-temperature gate bias (HTGB) and hightemperature gate switching (HTGS) conditions reveal correlations between dig/dt,max and GOD, with variations of 5.61%, 5% and 8.33%, after 160 hours of aging. Double pulse test (DPT) results indicate that dig/dt,max is independent of external factors such as temperature, drain-source voltage (Vds), drain current (Ids) and package aging. Results from a buck converter further validate the feasibility of long-term online monitoring.
KW - condition monitoring
KW - gate current
KW - gate oxide
KW - PCB Rogowski coil
KW - SiC MOSFET
UR - http://www.scopus.com/inward/record.url?scp=105005801109&partnerID=8YFLogxK
U2 - 10.1109/TPEL.2025.3571725
DO - 10.1109/TPEL.2025.3571725
M3 - Journal article
AN - SCOPUS:105005801109
SN - 0885-8993
SP - 1
EP - 5
JO - IEEE Transactions on Power Electronics
JF - IEEE Transactions on Power Electronics
ER -
