TY - GEN
T1 - An integrated MEMS thermal emitter with piezoelectric actuation
AU - Li, Nanxi
AU - Fong, Andrew Whye Keong
AU - Wang, Huanhuan
AU - Lim, Leh Woon
AU - Tobing, Landobasa Y.M.
AU - Chua, Yun Da
AU - Xu, Linfang
AU - Chen, Weiguo
AU - Zhang, Qingxin
AU - Cai, Hong
AU - Wang, Qi Jie
AU - Lee, Lennon Yao Ting
N1 - Publisher Copyright:
© 2023 SPIE.
PY - 2023/3
Y1 - 2023/3
N2 - Microelectromechanical system (MEMS)-based thermal emitter is a key component in an optical sensor to provide broadband emission at mid-infrared wavelengths, where a lot of molecules have their unique absorption profile. However, the thermal emission from a MEMS emitter is typically fixed at a specific spatial coordinate. In this work, a MEMS thermal emitter with piezoelectric actuation to realize active tuning is demonstrated. Thermal emission comes from a doped silicon layer acting as a resistive heater. Piezoelectric actuation is enabled by an aluminum nitride layer on a designed cantilever. The devices are fabricated on a complementary metal-oxide semiconductor (CMOS)-compatible process line. The fabricated thermal emitter at the tip of the cantilever generates broadband MIR thermal emission with spectrum peaked around 10 µm wavelength, and piezoelectric actuation with a displacement of more than 20 μm. The work paves the way towards self-adaptable MEMS directional emitter for various applications including chemical/gas sensing.
AB - Microelectromechanical system (MEMS)-based thermal emitter is a key component in an optical sensor to provide broadband emission at mid-infrared wavelengths, where a lot of molecules have their unique absorption profile. However, the thermal emission from a MEMS emitter is typically fixed at a specific spatial coordinate. In this work, a MEMS thermal emitter with piezoelectric actuation to realize active tuning is demonstrated. Thermal emission comes from a doped silicon layer acting as a resistive heater. Piezoelectric actuation is enabled by an aluminum nitride layer on a designed cantilever. The devices are fabricated on a complementary metal-oxide semiconductor (CMOS)-compatible process line. The fabricated thermal emitter at the tip of the cantilever generates broadband MIR thermal emission with spectrum peaked around 10 µm wavelength, and piezoelectric actuation with a displacement of more than 20 μm. The work paves the way towards self-adaptable MEMS directional emitter for various applications including chemical/gas sensing.
KW - MEMS
KW - piezoelectric actuation
KW - thermal emitter
UR - https://www.scopus.com/pages/publications/85159774603
U2 - 10.1117/12.2649536
DO - 10.1117/12.2649536
M3 - Conference article published in proceeding or book
AN - SCOPUS:85159774603
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - MOEMS and Miniaturized Systems XXII
A2 - Zappe, Hans
A2 - Piyawattanametha, Wibool
A2 - Piyawattanametha, Wibool
A2 - Park, Yong-Hwa
PB - SPIE
T2 - MOEMS and Miniaturized Systems XXII 2023
Y2 - 30 January 2023 through 31 January 2023
ER -