An explicit surface-potential-based model for undoped double-gate MOSFETs

Jing Feng Gong, Philip Ching Ho Chan, Mansun Chan

Research output: Journal article publicationJournal articleAcademic researchpeer-review

5 Citations (Scopus)

Abstract

This paper presents an explicit surface-potential-based analytic model for the undoped long-channel symmetric double-gate MOSFET. The analytic model is derived from the rigorous solution of Poisson's equation. Unlike the exiting analytic models using the numerical iterative method, this analytic model is based on an explicit analytic approximation. The accuracy of the proposed analytic model is justified by extensive comparisons with the numerical calculations. The relative error in nV range has been achieved. The resulting current-voltage and the derivative curves are in complete agreement with the numerical iterative results.
Original languageEnglish
Pages (from-to)282-288
Number of pages7
JournalSolid-State Electronics
Volume52
Issue number2
DOIs
Publication statusPublished - 1 Feb 2008
Externally publishedYes

Keywords

  • Compact modeling
  • Double-gate MOSFETs
  • Explicit model
  • Surface potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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