An explicit surface-potential-based model for undoped double-gate MOSFETs

Jing Feng Gong; Philip Ching Ho Chan; Mansun Chan

doi:10.1016/j.sse.2007.08.013

An explicit surface-potential-based model for undoped double-gate MOSFETs

Jing Feng Gong, Philip Ching Ho Chan, Mansun Chan

Research output: Journal article publication › Journal article › Academic research › peer-review

6 Citations (Scopus)

Abstract

This paper presents an explicit surface-potential-based analytic model for the undoped long-channel symmetric double-gate MOSFET. The analytic model is derived from the rigorous solution of Poisson's equation. Unlike the exiting analytic models using the numerical iterative method, this analytic model is based on an explicit analytic approximation. The accuracy of the proposed analytic model is justified by extensive comparisons with the numerical calculations. The relative error in nV range has been achieved. The resulting current-voltage and the derivative curves are in complete agreement with the numerical iterative results.

Original language	English
Pages (from-to)	282-288
Number of pages	7
Journal	Solid-State Electronics
Volume	52
Issue number	2
DOIs	https://doi.org/10.1016/j.sse.2007.08.013
Publication status	Published - 1 Feb 2008
Externally published	Yes

Keywords

Compact modeling
Double-gate MOSFETs
Explicit model
Surface potential

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

More information

10.1016/j.sse.2007.08.013

Cite this

@article{b16d339001094e9f906334e700a07721,

title = "An explicit surface-potential-based model for undoped double-gate MOSFETs",

abstract = "This paper presents an explicit surface-potential-based analytic model for the undoped long-channel symmetric double-gate MOSFET. The analytic model is derived from the rigorous solution of Poisson's equation. Unlike the exiting analytic models using the numerical iterative method, this analytic model is based on an explicit analytic approximation. The accuracy of the proposed analytic model is justified by extensive comparisons with the numerical calculations. The relative error in nV range has been achieved. The resulting current-voltage and the derivative curves are in complete agreement with the numerical iterative results.",

keywords = "Compact modeling, Double-gate MOSFETs, Explicit model, Surface potential",

author = "Gong, {Jing Feng} and Chan, {Philip Ching Ho} and Mansun Chan",

year = "2008",

month = feb,

day = "1",

doi = "10.1016/j.sse.2007.08.013",

language = "English",

volume = "52",

pages = "282--288",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "2",

}

TY - JOUR

T1 - An explicit surface-potential-based model for undoped double-gate MOSFETs

AU - Gong, Jing Feng

AU - Chan, Philip Ching Ho

AU - Chan, Mansun

PY - 2008/2/1

Y1 - 2008/2/1

N2 - This paper presents an explicit surface-potential-based analytic model for the undoped long-channel symmetric double-gate MOSFET. The analytic model is derived from the rigorous solution of Poisson's equation. Unlike the exiting analytic models using the numerical iterative method, this analytic model is based on an explicit analytic approximation. The accuracy of the proposed analytic model is justified by extensive comparisons with the numerical calculations. The relative error in nV range has been achieved. The resulting current-voltage and the derivative curves are in complete agreement with the numerical iterative results.

AB - This paper presents an explicit surface-potential-based analytic model for the undoped long-channel symmetric double-gate MOSFET. The analytic model is derived from the rigorous solution of Poisson's equation. Unlike the exiting analytic models using the numerical iterative method, this analytic model is based on an explicit analytic approximation. The accuracy of the proposed analytic model is justified by extensive comparisons with the numerical calculations. The relative error in nV range has been achieved. The resulting current-voltage and the derivative curves are in complete agreement with the numerical iterative results.

KW - Compact modeling

KW - Double-gate MOSFETs

KW - Explicit model

KW - Surface potential

UR - http://www.scopus.com/inward/record.url?scp=38049004910&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2007.08.013

DO - 10.1016/j.sse.2007.08.013

M3 - Journal article

SN - 0038-1101

VL - 52

SP - 282

EP - 288

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 2

ER -

An explicit surface-potential-based model for undoped double-gate MOSFETs

Abstract

Keywords

ASJC Scopus subject areas

More information

Other files and links

Fingerprint

Cite this