TY - JOUR
T1 - An efficient green-emitting quantum dot with near-unity quantum yield and suppressed Auger recombination for high-performance light-emitting diodes
AU - Fan, Xiaokun
AU - Mu, Zhen
AU - Chen, Zhao
AU - Zhan, Yunfeng
AU - Meng, Fanyuan
AU - Li, Yang
AU - Xing, Guichuan
AU - Wong, Wai Yeung
N1 - Funding Information:
X.F. and Z.M. contributed equally to this work. Z.C. thanks the National Natural Science Foundation of China (No. 21901190), the College Innovation Team Project of Guangdong Province (2021KCXTD042), the Natural Science Foundation of Fujian Province (No. 2021 J02001), the Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Project Program (2021ZZ201), the Guangdong Basic and Applied Basic Research Foundation (No. 2021A1515110165) for the financial support. G.X. acknowledges the Science and Technology Development Fund, Macao SAR (File no. 0082/2021/A2), UM’s research fund (File no. MYRG2020-00151-IAPME), the National Natural Science Foundation of China (61935017, 62175268), Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials (2019B121205002), and Shenzhen-Hong Kong-Macao Science and Technology Innovation Project (Category C) (SGDX2020110309360100). W.-Y.W. thanks the Hong Kong Research Grants Council (PolyU 15305320), the Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices (2019B121205001), the National Natural Science Foundation of China (No. 51873176), the CAS-Croucher Funding Scheme for Joint Laboratories (ZH4A), the ITC Guangdong-Hong Kong Technology Cooperation Funding Scheme (TCFS) (GHP/038/19GD), the Hong Kong Polytechnic University, Research Institute for Smart Energy (CDAQ), and the Endowed Professorship in Energy from Miss Clarea Au (847S) for the financial support.
Publisher Copyright:
© 2023 Elsevier B.V.
PY - 2023/4/1
Y1 - 2023/4/1
N2 - Near 100% photoluminescence quantum yield (PL QY) is the first target for designing luminescent quantum dots (QDs). Here, an alloyed QD with a core/shell structure of Cd0.194Zn0.806Se0.406S0.594/ZnS is synthesized and characterized by the feature of large core size (about 10 nm) and thin shell (around three ZnS monolayers). It exhibits an efficient green emission with the PL QY of 99.8% and ultra-fast radiative transition rate (kr) of 4.16 × 107 s−1. It demonstrates that the excited state will be rapidly decayed to its ground state through a radiative channel and less vulnerable to non-radiative processes. Under a high pump intensity (254.65 μJ cm−2), the Cd0.194Zn0.806Se0.406S0.594/ZnS QD still owns a long biexciton decay lifetime (τxx) of 1.05 ns and high biexciton QYxx of 25.1%, corresponding to a suppressed non-radiative Auger recombination. The Cd0.194Zn0.806Se0.406S0.594/ZnS QD based light-emitting diode exhibits a peak external quantum efficiency of 20.1% and brightness of over 105 cd m−2 at 5.2 V. We believe that the Cd0.194Zn0.806Se0.406S0.594/ZnS QD not only provides a near-unity QY but also ensures its QD based light-emitting diode (QLED) with an excellent performance, which could be an excellent QD material for QLED applications.
AB - Near 100% photoluminescence quantum yield (PL QY) is the first target for designing luminescent quantum dots (QDs). Here, an alloyed QD with a core/shell structure of Cd0.194Zn0.806Se0.406S0.594/ZnS is synthesized and characterized by the feature of large core size (about 10 nm) and thin shell (around three ZnS monolayers). It exhibits an efficient green emission with the PL QY of 99.8% and ultra-fast radiative transition rate (kr) of 4.16 × 107 s−1. It demonstrates that the excited state will be rapidly decayed to its ground state through a radiative channel and less vulnerable to non-radiative processes. Under a high pump intensity (254.65 μJ cm−2), the Cd0.194Zn0.806Se0.406S0.594/ZnS QD still owns a long biexciton decay lifetime (τxx) of 1.05 ns and high biexciton QYxx of 25.1%, corresponding to a suppressed non-radiative Auger recombination. The Cd0.194Zn0.806Se0.406S0.594/ZnS QD based light-emitting diode exhibits a peak external quantum efficiency of 20.1% and brightness of over 105 cd m−2 at 5.2 V. We believe that the Cd0.194Zn0.806Se0.406S0.594/ZnS QD not only provides a near-unity QY but also ensures its QD based light-emitting diode (QLED) with an excellent performance, which could be an excellent QD material for QLED applications.
UR - http://www.scopus.com/inward/record.url?scp=85149073460&partnerID=8YFLogxK
U2 - 10.1016/j.cej.2023.142027
DO - 10.1016/j.cej.2023.142027
M3 - Journal article
AN - SCOPUS:85149073460
SN - 1385-8947
VL - 461
JO - Chemical Engineering Journal
JF - Chemical Engineering Journal
M1 - 142027
ER -