An effective method to increase sensitivity and stability of the integrated gas sensor with sensing film annealing at higher temperature

Gui Zhen Yan, Philip Ching Ho Chan, J. K.O. Sin, I. Ming Hsing, Yang Yuan Wang

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

This paper presents a new type of silicon based integrated gas sensor using tin oxide film, which has been successfully designed and fabricated using the surface micromachining technique. In order to find out the optimal annealing condition, the sensing films in the integrated gas sensor devices were annealed at different temperature. The annealing temperature of 700°C was the best for high sensitivity and stability of die sensing film. The grain size and atomic concentration of the tin oxide were analysed.
Original languageEnglish
Title of host publication2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
PublisherIEEE
Pages773-776
Number of pages4
Volume2
ISBN (Electronic)0780365208, 9780780365209
DOIs
Publication statusPublished - 1 Jan 2001
Externally publishedYes
Event6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Shanghai, China
Duration: 22 Oct 200125 Oct 2001

Conference

Conference6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001
Country/TerritoryChina
CityShanghai
Period22/10/0125/10/01

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this