An effective method to increase sensitivity and stability of the integrated gas sensor with sensing film annealing at higher temperature

Gui Zhen Yan; Philip Ching Ho Chan; J. K.O. Sin; I. Ming Hsing; Yang Yuan Wang

doi:10.1109/ICSICT.2001.982009

An effective method to increase sensitivity and stability of the integrated gas sensor with sensing film annealing at higher temperature

Gui Zhen Yan, Philip Ching Ho Chan, J. K.O. Sin, I. Ming Hsing, Yang Yuan Wang

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

This paper presents a new type of silicon based integrated gas sensor using tin oxide film, which has been successfully designed and fabricated using the surface micromachining technique. In order to find out the optimal annealing condition, the sensing films in the integrated gas sensor devices were annealed at different temperature. The annealing temperature of 700°C was the best for high sensitivity and stability of die sensing film. The grain size and atomic concentration of the tin oxide were analysed.

Original language	English
Title of host publication	2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
Publisher	IEEE
Pages	773-776
Number of pages	4
Volume	2
ISBN (Electronic)	0780365208, 9780780365209
DOIs	https://doi.org/10.1109/ICSICT.2001.982009
Publication status	Published - 1 Jan 2001
Externally published	Yes
Event	6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Shanghai, China Duration: 22 Oct 2001 → 25 Oct 2001

Conference

Conference	6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001
Country/Territory	China
City	Shanghai
Period	22/10/01 → 25/10/01

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/ICSICT.2001.982009

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Yan, G. Z., Chan, P. C. H., Sin, J. K. O., Hsing, I. M., & Wang, Y. Y. (2001). An effective method to increase sensitivity and stability of the integrated gas sensor with sensing film annealing at higher temperature. In 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings (Vol. 2, pp. 773-776). Article 982009 IEEE. https://doi.org/10.1109/ICSICT.2001.982009

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title = "An effective method to increase sensitivity and stability of the integrated gas sensor with sensing film annealing at higher temperature",

abstract = "This paper presents a new type of silicon based integrated gas sensor using tin oxide film, which has been successfully designed and fabricated using the surface micromachining technique. In order to find out the optimal annealing condition, the sensing films in the integrated gas sensor devices were annealed at different temperature. The annealing temperature of 700°C was the best for high sensitivity and stability of die sensing film. The grain size and atomic concentration of the tin oxide were analysed.",

author = "Yan, {Gui Zhen} and Chan, {Philip Ching Ho} and Sin, {J. K.O.} and Hsing, {I. Ming} and Wang, {Yang Yuan}",

year = "2001",

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doi = "10.1109/ICSICT.2001.982009",

language = "English",

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booktitle = "2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings",

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Yan, GZ, Chan, PCH, Sin, JKO, Hsing, IM & Wang, YY 2001, An effective method to increase sensitivity and stability of the integrated gas sensor with sensing film annealing at higher temperature. in 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. vol. 2, 982009, IEEE, pp. 773-776, 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001, Shanghai, China, 22/10/01. https://doi.org/10.1109/ICSICT.2001.982009

An effective method to increase sensitivity and stability of the integrated gas sensor with sensing film annealing at higher temperature. / Yan, Gui Zhen; Chan, Philip Ching Ho; Sin, J. K.O. et al.
2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. Vol. 2 IEEE, 2001. p. 773-776 982009.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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AB - This paper presents a new type of silicon based integrated gas sensor using tin oxide film, which has been successfully designed and fabricated using the surface micromachining technique. In order to find out the optimal annealing condition, the sensing films in the integrated gas sensor devices were annealed at different temperature. The annealing temperature of 700°C was the best for high sensitivity and stability of die sensing film. The grain size and atomic concentration of the tin oxide were analysed.

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An effective method to increase sensitivity and stability of the integrated gas sensor with sensing film annealing at higher temperature

Abstract

Conference

ASJC Scopus subject areas

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