@inproceedings{027c92d782de4316a159cf4b8788dc02,
title = "An approach of lateral RF MEMS switch for high performance",
abstract = "This paper presents a novel type of lateral series microwave switch on a silicon-on-insulator (SOI) substrate with a coplanar waveguide (CPW) configuration. It is built with a cantilever beam at the side of the gap of the microwave t-line and laterally driven by electrostatic force. The mechanical structures are made of single-crystal-silicon and fabricated by deep reactive ion etch (DRIE) technology. Evaporated aluminum serves as contact material. The fabrication process only needs one mask. The measured result shows up to 26.5 GHz the isolation of the switch is over 18 dB. The threshold voltage is about 12 volts.",
keywords = "Aluminum, Contacts, Coplanar waveguides, Electrostatics, Etching, Isolation technology, Radiofrequency microelectromechanical systems, Silicon on insulator technology, Structural beams, Switches",
author = "M. Tang and A. Agarwal and J. Li and Zhang, {Q. X.} and P. Win and Huang, {J. M.} and Liu, {A. Q.}",
note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 5th Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS 2003, DTIP 2003 ; Conference date: 05-05-2003 Through 07-05-2003",
year = "2003",
month = may,
doi = "10.1109/DTIP.2003.1287016",
language = "English",
series = "DTIP 2003 - Design, Test, Integration and Packaging of MEMS/MOEMS 2003",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "99--102",
editor = "Bernard Courtois and Karam, {Jean Michel} and Jan Korvink and Karen Markus and Keren Bergman and Bernd Michel",
booktitle = "DTIP 2003 - Design, Test, Integration and Packaging of MEMS/MOEMS 2003",
}