Abstract
An air-spacer technology with raised source/drain (S/D) for ultrathin-body (UTB) silicon-on-insulator MOSFETs is developed. The results show that the poly raised S/D can effectively reduce the series resistance and the air spacer can effectively reduce the fringing capacitance. The air spacer is particularly useful when combined with high-K gate dielectric. The improved device characteristics are demonstrated experimentally and by extensive two-dimensional device simulation.
Original language | English |
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Pages (from-to) | 323-325 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 26 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1 May 2005 |
Externally published | Yes |
Keywords
- Air spacer
- Gate insulator
- High-κ dielectric
- Raised source/drain (S/D)
- Silicon-on-insulator (SOI)
- Ultrathinbody (UTB)
ASJC Scopus subject areas
- Electrical and Electronic Engineering