AlN nanowires: Synthesis, physical properties, and nanoelectronics applications

Kenry, Ken Tye Yong, Siu Fung Yu

Research output: Journal article publicationReview articleAcademic researchpeer-review

58 Citations (Scopus)


One-dimensional aluminum nitride (AlN) nanostructures, especially AlN nanowires, have been subjected to numerous investigations due to their unique physical properties and applications ranging from electronics to biomedical. This article reviews the synthesis of AlN nanowires and studies their physical properties and potential nanoelectronics applications. First, the different fabrication techniques used to synthesize AlN nanowires and their growth mechanisms are discussed. Next, the physical properties of AlN nanowires, such as the field emission, transport, photoluminescence, as well as the mechanical and piezoelectric properties are summarized. Finally, the potential applications of AlN nanowires in the field of nanoelectronics are described. Furthermore, this review summarizes the perspectives and outlooks on the future development of AlN nanowires.
Original languageEnglish
Pages (from-to)5341-5360
Number of pages20
JournalJournal of Materials Science
Issue number14
Publication statusPublished - 1 Jul 2012

ASJC Scopus subject areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering


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