ALN-based piezoelectric resonator for infrared sensing application

Wan C. Ang; Piotr Kropelnicki; Humberto Campanella; Yao Zhu; Andrew B. Randles; Hong Cai; Yuandong A. Gu; Kam C. Leong; Chuan S. Tan

doi:10.1109/MEMSYS.2014.6765734

ALN-based piezoelectric resonator for infrared sensing application

Wan C. Ang, Piotr Kropelnicki, Humberto Campanella, Yao Zhu, Andrew B. Randles, Hong Cai, Yuandong A. Gu, Kam C. Leong, Chuan S. Tan

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

10 Citations (Scopus)

Abstract

This paper reports a highly sensitive aluminum nitride (AlN) based resonant uncooled infrared (IR) detector utilizing photo-sensitive and piezoelectric properties of polycrystalline AlN. The design, fabrication, and IR sensing characterization of the device are presented. Instead of resonant frequency shift, S₂₁ magnitude shift was observed upon IR illumination under both vacuum and ambient measurements. Thus, photoresponse mechanism was proposed rather than thermal effect. An AlN resonator operating at 2.336 GHz with a quality factor (Q) of 830 exhibits an IR responsivity and detectivity of 166 kdB/W and 1.41 × 10⁷ cm√Hz/W, respectively.

Original language	English
Title of host publication	MEMS 2014 - 27th IEEE International Conference on Micro Electro Mechanical Systems
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	688-691
Number of pages	4
ISBN (Print)	9781479935086
DOIs	https://doi.org/10.1109/MEMSYS.2014.6765734
Publication status	Published - Jan 2014
Externally published	Yes
Event	27th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2014 - San Francisco, CA, United States Duration: 26 Jan 2014 → 30 Jan 2014

Publication series

Name	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN (Print)	1084-6999

Conference

Conference	27th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2014
Country/Territory	United States
City	San Francisco, CA
Period	26/01/14 → 30/01/14

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanical Engineering
Electrical and Electronic Engineering

More information

10.1109/MEMSYS.2014.6765734

Cite this

Ang, W. C., Kropelnicki, P., Campanella, H., Zhu, Y., Randles, A. B., Cai, H., Gu, Y. A., Leong, K. C., & Tan, C. S. (2014). ALN-based piezoelectric resonator for infrared sensing application. In MEMS 2014 - 27th IEEE International Conference on Micro Electro Mechanical Systems (pp. 688-691). Article 6765734 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MEMSYS.2014.6765734

Ang, Wan C. ; Kropelnicki, Piotr ; Campanella, Humberto et al. / ALN-based piezoelectric resonator for infrared sensing application. MEMS 2014 - 27th IEEE International Conference on Micro Electro Mechanical Systems. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 688-691 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

@inproceedings{c65ba0b124a64655bf231c2ed9201ebc,

title = "ALN-based piezoelectric resonator for infrared sensing application",

abstract = "This paper reports a highly sensitive aluminum nitride (AlN) based resonant uncooled infrared (IR) detector utilizing photo-sensitive and piezoelectric properties of polycrystalline AlN. The design, fabrication, and IR sensing characterization of the device are presented. Instead of resonant frequency shift, S21 magnitude shift was observed upon IR illumination under both vacuum and ambient measurements. Thus, photoresponse mechanism was proposed rather than thermal effect. An AlN resonator operating at 2.336 GHz with a quality factor (Q) of 830 exhibits an IR responsivity and detectivity of 166 kdB/W and 1.41 × 107 cm√Hz/W, respectively.",

author = "Ang, {Wan C.} and Piotr Kropelnicki and Humberto Campanella and Yao Zhu and Randles, {Andrew B.} and Hong Cai and Gu, {Yuandong A.} and Leong, {Kam C.} and Tan, {Chuan S.}",

year = "2014",

month = jan,

doi = "10.1109/MEMSYS.2014.6765734",

language = "English",

isbn = "9781479935086",

series = "Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "688--691",

booktitle = "MEMS 2014 - 27th IEEE International Conference on Micro Electro Mechanical Systems",

note = "27th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2014 ; Conference date: 26-01-2014 Through 30-01-2014",

}

Ang, WC, Kropelnicki, P, Campanella, H, Zhu, Y, Randles, AB, Cai, H, Gu, YA, Leong, KC & Tan, CS 2014, ALN-based piezoelectric resonator for infrared sensing application. in MEMS 2014 - 27th IEEE International Conference on Micro Electro Mechanical Systems., 6765734, Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Institute of Electrical and Electronics Engineers Inc., pp. 688-691, 27th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2014, San Francisco, CA, United States, 26/01/14. https://doi.org/10.1109/MEMSYS.2014.6765734

ALN-based piezoelectric resonator for infrared sensing application. / Ang, Wan C.; Kropelnicki, Piotr; Campanella, Humberto et al.
MEMS 2014 - 27th IEEE International Conference on Micro Electro Mechanical Systems. Institute of Electrical and Electronics Engineers Inc., 2014. p. 688-691 6765734 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - ALN-based piezoelectric resonator for infrared sensing application

AU - Ang, Wan C.

AU - Kropelnicki, Piotr

AU - Campanella, Humberto

AU - Zhu, Yao

AU - Randles, Andrew B.

AU - Cai, Hong

AU - Gu, Yuandong A.

AU - Leong, Kam C.

AU - Tan, Chuan S.

PY - 2014/1

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N2 - This paper reports a highly sensitive aluminum nitride (AlN) based resonant uncooled infrared (IR) detector utilizing photo-sensitive and piezoelectric properties of polycrystalline AlN. The design, fabrication, and IR sensing characterization of the device are presented. Instead of resonant frequency shift, S21 magnitude shift was observed upon IR illumination under both vacuum and ambient measurements. Thus, photoresponse mechanism was proposed rather than thermal effect. An AlN resonator operating at 2.336 GHz with a quality factor (Q) of 830 exhibits an IR responsivity and detectivity of 166 kdB/W and 1.41 × 107 cm√Hz/W, respectively.

AB - This paper reports a highly sensitive aluminum nitride (AlN) based resonant uncooled infrared (IR) detector utilizing photo-sensitive and piezoelectric properties of polycrystalline AlN. The design, fabrication, and IR sensing characterization of the device are presented. Instead of resonant frequency shift, S21 magnitude shift was observed upon IR illumination under both vacuum and ambient measurements. Thus, photoresponse mechanism was proposed rather than thermal effect. An AlN resonator operating at 2.336 GHz with a quality factor (Q) of 830 exhibits an IR responsivity and detectivity of 166 kdB/W and 1.41 × 107 cm√Hz/W, respectively.

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DO - 10.1109/MEMSYS.2014.6765734

M3 - Conference article published in proceeding or book

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T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

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Ang WC, Kropelnicki P, Campanella H, Zhu Y, Randles AB, Cai H et al. ALN-based piezoelectric resonator for infrared sensing application. In MEMS 2014 - 27th IEEE International Conference on Micro Electro Mechanical Systems. Institute of Electrical and Electronics Engineers Inc. 2014. p. 688-691. 6765734. (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). doi: 10.1109/MEMSYS.2014.6765734

ALN-based piezoelectric resonator for infrared sensing application

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