Alloy-buffer-controlled van der Waals epitaxial growth of aligned tellurene

Cong Wang, Chao Xu, Xuyun Guo, Ning Zhang, Jianmin Yan, Jiewei Chen, Wei Yu, Jing Kai Qin, Ye Zhu, Lain Jong Li, Yang Chai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

4 Citations (Scopus)


Group-VI elemental two-dimensional (2D) materials (e.g., tellurene (Te)) have unique crystalline structures and extraordinarily physical properties. However, it still remains a great challenge to controllably grow 2D Te with good repeatability, uniformity, and highly aligned orientation using vapor growth method. Here, we design a Cu foil-assisted alloy-buffer-controlled growth method to epitaxially grow aligned single-crystalline 2D Te on an insulating mica substrate. The in-situ formation of Cu−Te alloy plays a key role on 2D Te growth, alleviating the spatial and temporal non-uniformity of precursor in conventional vapor deposition process. Through transmission electron microscopy (TEM) analysis combined with theoretical calculations, we unveil that the alignment growth of Te in the [110] direction is along the [600] direction of mica, owing to the small lattice mismatch (0.15%) and strong binding strength. This work presents a method to grow aligned high-quality 2D Te in a controllable manner. [Figure not available: see fulltext.].

Original languageEnglish
Pages (from-to)5712-5718
Number of pages7
JournalNano Research
Issue number6
Publication statusPublished - Jun 2022


  • aligned growth
  • epitaxy growth
  • tellurene
  • two-dimensional materials
  • van der Waals interaction

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • General Materials Science
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Alloy-buffer-controlled van der Waals epitaxial growth of aligned tellurene'. Together they form a unique fingerprint.

Cite this