Aligned InN nanofingers prepared by the ion-beam assisted filtered cathodic vacuum arc technique

X. H. Ji; Shu Ping Lau; H. Y. Yang; S. F. Yu

doi:10.1088/0957-4484/16/12/057

Aligned InN nanofingers prepared by the ion-beam assisted filtered cathodic vacuum arc technique

X. H. Ji, Shu Ping Lau, H. Y. Yang, S. F. Yu

Research output: Journal article publication › Journal article › Academic research › peer-review

9 Citations (Scopus)

Abstract

We report the synthesis of aligned wurtzite InN nanofingers by the ion-beam assisted filtered cathodic vacuum arc technique. InN nanofingers exhibit a polycrystalline structure. Photoluminescence (PL) and field emission properties of the InN nanofingers were studied. The PL emission peak was centred at ∼1.1 eV with a full width at half maximum of 105 meV. The field emission characteristic was observed from the InN nanofingers with turn-on field of 9.7 V νm-1 at a current density of 10 νA cm-2. The formation of InN nanofingers was attributed to the Volmer-Weber growth mode.

Original language	English
Pages (from-to)	3069-3073
Number of pages	5
Journal	Nanotechnology
Volume	16
Issue number	12
DOIs	https://doi.org/10.1088/0957-4484/16/12/057
Publication status	Published - 1 Dec 2005
Externally published	Yes

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/16/12/057

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abstract = "We report the synthesis of aligned wurtzite InN nanofingers by the ion-beam assisted filtered cathodic vacuum arc technique. InN nanofingers exhibit a polycrystalline structure. Photoluminescence (PL) and field emission properties of the InN nanofingers were studied. The PL emission peak was centred at ∼1.1 eV with a full width at half maximum of 105 meV. The field emission characteristic was observed from the InN nanofingers with turn-on field of 9.7 V νm-1 at a current density of 10 νA cm-2. The formation of InN nanofingers was attributed to the Volmer-Weber growth mode.",

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AU - Ji, X. H.

AU - Lau, Shu Ping

AU - Yang, H. Y.

AU - Yu, S. F.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - We report the synthesis of aligned wurtzite InN nanofingers by the ion-beam assisted filtered cathodic vacuum arc technique. InN nanofingers exhibit a polycrystalline structure. Photoluminescence (PL) and field emission properties of the InN nanofingers were studied. The PL emission peak was centred at ∼1.1 eV with a full width at half maximum of 105 meV. The field emission characteristic was observed from the InN nanofingers with turn-on field of 9.7 V νm-1 at a current density of 10 νA cm-2. The formation of InN nanofingers was attributed to the Volmer-Weber growth mode.

AB - We report the synthesis of aligned wurtzite InN nanofingers by the ion-beam assisted filtered cathodic vacuum arc technique. InN nanofingers exhibit a polycrystalline structure. Photoluminescence (PL) and field emission properties of the InN nanofingers were studied. The PL emission peak was centred at ∼1.1 eV with a full width at half maximum of 105 meV. The field emission characteristic was observed from the InN nanofingers with turn-on field of 9.7 V νm-1 at a current density of 10 νA cm-2. The formation of InN nanofingers was attributed to the Volmer-Weber growth mode.

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DO - 10.1088/0957-4484/16/12/057

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SP - 3069

EP - 3073

JO - Nanotechnology

JF - Nanotechnology

IS - 12

ER -

Aligned InN nanofingers prepared by the ion-beam assisted filtered cathodic vacuum arc technique

Abstract

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