Al-recoil implantation into n-type Si using different primary ions

H. L. Kwok, W. C. Wong, Siu Chung Wong

Research output: Journal article publicationJournal articleAcademic researchpeer-review

2 Citations (Scopus)

Abstract

Al/Si is probably the most widely investigated metal semiconductor structure ever examined. This work studied the effects of Al-recoil implantation into n-type Si using Ar+, B+ and BF2+ as the primary ions. At different implant dosages, simulated profiles, sheet resistances, I-V curves were measured to determine the properties of the implanted surface layers. It was found that the activation of the recoiled Al was much lower compared with that of B. At low implant dosages, Schottky barriers were formed. They became p-n junctions at the higher implant dosages. Transitional properties were affected by the recombination mechanisms and damage. The Ar+-implanted samples produced p-n junctions with somewhat inferior characteristics.
Original languageEnglish
Article number002
Pages (from-to)6-11
Number of pages6
JournalSemiconductor Science and Technology
Volume3
Issue number1
DOIs
Publication statusPublished - 1 Dec 1988
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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