Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells

Xin Chen, Bi Jun Zhao, Zhi Wei Ren, Jin Hui Tong, Xing Fu Wang, Xiang Jing Zhuo, Jun Zhang, Dan Wei Li, Han Xiang Yi, Shu Ti Li

Research output: Journal article publicationJournal articleAcademic researchpeer-review

3 Citations (Scopus)

Abstract

InGaN/GaN multiple quantum well (MQW) solar cells with stepped-thickness quantum wells (SQW) are designed and grown by metal-organic chemical vapor deposition. The stepped-thickness quantum wells structure, in which the well thickness becomes smaller and smaller along the growth direction, reveals better crystalline quality and better spectral overlap with the solar spectrum. Consequently, the short-circuit current density (Jsc) and conversion efficiency of the solar cell are enhanced by 27.12% and 56.41% compared with the conventional structure under illumination of AM1.5G (100 mW/cm2). In addition, approaches to further promote the performance of InGaN/GaN multiple quantum well solar cells are discussed and presented.

Original languageEnglish
Article number078402
JournalChinese Physics B
Volume22
Issue number7
DOIs
Publication statusPublished - Jul 2013
Externally publishedYes

Keywords

  • GaN based solar cells
  • metal organic chemical vapor deposition (MOCVD)
  • stepped-thickness quantum wells

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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