Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells

Xin Chen; Bi Jun Zhao; Zhi Wei Ren; Jin Hui Tong; Xing Fu Wang; Xiang Jing Zhuo; Jun Zhang; Dan Wei Li; Han Xiang Yi; Shu Ti Li

doi:10.1088/1674-1056/22/7/078402

Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells

Xin Chen, Bi Jun Zhao, Zhi Wei Ren, Jin Hui Tong, Xing Fu Wang, Xiang Jing Zhuo, Jun Zhang, Dan Wei Li, Han Xiang Yi, Shu Ti Li

Department of Electrical and Electronic Engineering

Research output: Journal article publication › Journal article › Academic research › peer-review

3 Citations (Scopus)

Abstract

InGaN/GaN multiple quantum well (MQW) solar cells with stepped-thickness quantum wells (SQW) are designed and grown by metal-organic chemical vapor deposition. The stepped-thickness quantum wells structure, in which the well thickness becomes smaller and smaller along the growth direction, reveals better crystalline quality and better spectral overlap with the solar spectrum. Consequently, the short-circuit current density (Jsc) and conversion efficiency of the solar cell are enhanced by 27.12% and 56.41% compared with the conventional structure under illumination of AM1.5G (100 mW/cm²). In addition, approaches to further promote the performance of InGaN/GaN multiple quantum well solar cells are discussed and presented.

Original language	English
Article number	078402
Journal	Chinese Physics B
Volume	22
Issue number	7
DOIs	https://doi.org/10.1088/1674-1056/22/7/078402
Publication status	Published - Jul 2013

Keywords

GaN based solar cells
metal organic chemical vapor deposition (MOCVD)
stepped-thickness quantum wells

ASJC Scopus subject areas

General Physics and Astronomy

More information

10.1088/1674-1056/22/7/078402

Cite this

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title = "Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells",

abstract = "InGaN/GaN multiple quantum well (MQW) solar cells with stepped-thickness quantum wells (SQW) are designed and grown by metal-organic chemical vapor deposition. The stepped-thickness quantum wells structure, in which the well thickness becomes smaller and smaller along the growth direction, reveals better crystalline quality and better spectral overlap with the solar spectrum. Consequently, the short-circuit current density (Jsc) and conversion efficiency of the solar cell are enhanced by 27.12% and 56.41% compared with the conventional structure under illumination of AM1.5G (100 mW/cm2). In addition, approaches to further promote the performance of InGaN/GaN multiple quantum well solar cells are discussed and presented.",

keywords = "GaN based solar cells, metal organic chemical vapor deposition (MOCVD), stepped-thickness quantum wells",

author = "Xin Chen and Zhao, {Bi Jun} and Ren, {Zhi Wei} and Tong, {Jin Hui} and Wang, {Xing Fu} and Zhuo, {Xiang Jing} and Jun Zhang and Li, {Dan Wei} and Yi, {Han Xiang} and Li, {Shu Ti}",

year = "2013",

month = jul,

doi = "10.1088/1674-1056/22/7/078402",

language = "English",

volume = "22",

journal = "Chinese Physics B",

issn = "1674-1056",

publisher = "IOP Publishing Ltd.",

number = "7",

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TY - JOUR

T1 - Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells

AU - Chen, Xin

AU - Zhao, Bi Jun

AU - Ren, Zhi Wei

AU - Tong, Jin Hui

AU - Wang, Xing Fu

AU - Zhuo, Xiang Jing

AU - Zhang, Jun

AU - Li, Dan Wei

AU - Yi, Han Xiang

AU - Li, Shu Ti

PY - 2013/7

Y1 - 2013/7

N2 - InGaN/GaN multiple quantum well (MQW) solar cells with stepped-thickness quantum wells (SQW) are designed and grown by metal-organic chemical vapor deposition. The stepped-thickness quantum wells structure, in which the well thickness becomes smaller and smaller along the growth direction, reveals better crystalline quality and better spectral overlap with the solar spectrum. Consequently, the short-circuit current density (Jsc) and conversion efficiency of the solar cell are enhanced by 27.12% and 56.41% compared with the conventional structure under illumination of AM1.5G (100 mW/cm2). In addition, approaches to further promote the performance of InGaN/GaN multiple quantum well solar cells are discussed and presented.

AB - InGaN/GaN multiple quantum well (MQW) solar cells with stepped-thickness quantum wells (SQW) are designed and grown by metal-organic chemical vapor deposition. The stepped-thickness quantum wells structure, in which the well thickness becomes smaller and smaller along the growth direction, reveals better crystalline quality and better spectral overlap with the solar spectrum. Consequently, the short-circuit current density (Jsc) and conversion efficiency of the solar cell are enhanced by 27.12% and 56.41% compared with the conventional structure under illumination of AM1.5G (100 mW/cm2). In addition, approaches to further promote the performance of InGaN/GaN multiple quantum well solar cells are discussed and presented.

KW - GaN based solar cells

KW - metal organic chemical vapor deposition (MOCVD)

KW - stepped-thickness quantum wells

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U2 - 10.1088/1674-1056/22/7/078402

DO - 10.1088/1674-1056/22/7/078402

M3 - Journal article

AN - SCOPUS:84880537796

SN - 1674-1056

VL - 22

JO - Chinese Physics B

JF - Chinese Physics B

IS - 7

M1 - 078402

ER -

Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells

Abstract

Keywords

ASJC Scopus subject areas

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