Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer

Chao Liu, Zhi Wei Ren, Xin Chen, Bi Jun Zhao, Xing Fu Wang, Yi An Yin, Shu Ti Li

Research output: Journal article publicationJournal articleAcademic researchpeer-review

6 Citations (Scopus)

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Engineering

Material Science