Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer

Chao Liu, Zhi Wei Ren, Xin Chen, Bi Jun Zhao, Xing Fu Wang, Yi An Yin, Shu Ti Li

Research output: Journal article publicationJournal articleAcademic researchpeer-review

6 Citations (Scopus)


P-InGaN/p-GaN superlattices (SLs) are developed for a hole accumulation layer (HAL) of a blue light emitting diode (LED). Free hole concentration as high as 2.6 × 1018 cm-3 is achieved by adjusting the Cp2Mg flow rate during the growth of p-InGaN/p-GaN SLs. The p-InGaN/p-GaN SLs with appropriate Cp2Mg flow rates are then incorporated between the multi-quantum well and AlGaN electron blocking layer as an HAL, which leads to the enhancement of light output power by 29% at 200 mA, compared with the traditional LED without such SL HAL. Meanwhile, the efficiency droop is also effectively alleviated in the LED with the SL HAL. The improved performance is attributed to the increased hole injection efficiency, and the reduced electron leakage by inserting the p-type SL HAL.

Original languageEnglish
Article number058502
JournalChinese Physics B
Issue number5
Publication statusPublished - May 2013
Externally publishedYes


  • efficiency droop
  • hole accumulation layer
  • light emitting diodes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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