Advances in la-based high-k dielectrics for MOS applications

L. N. Liu, W. M. Tang, P. T. Lai

Research output: Journal article publicationReview articleAcademic researchpeer-review

24 Citations (Scopus)


This paper reviews the studies on La-based high-k dielectrics formetal-oxide-semiconductor (MOS) applications in recent years. According to the analyses of the physical and chemical characteristics of La2O3, its hygroscopicity and defects (oxygen vacancies, oxygen interstitials, interface states, and grain boundary states) are the main problems for high-performance devices. Reports show that post-deposition treatments (high temperature, laser), nitrogen incorporation and doping by other high-k material are capable of solving these problems. On the other hand, doping La into other high-k oxides can effectively passivate their oxygen vacancies and improve the threshold voltages of relevant MOS devices, thus improving the device performance. Investigations onMOS devices including non-volatile memory,MOS field-effect transistor, thin-film transistor, and novel devices (FinFET and nanowire-based transistor) suggest that La-based high-k dielectrics have high potential to fulfill the high-performance requirements in futureMOS applications.

Original languageEnglish
Article number217
Issue number4
Publication statusPublished - 1 Apr 2019


  • High-k dielectric
  • Lanthanum oxide
  • Metal-oxide-semiconductor

ASJC Scopus subject areas

  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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