Achieving high open-circuit voltage on planar perovskite solar cells via chlorine-doped tin oxide electron transport layers

Jiwei Liang, Zhiliang Chen, Guang Yang, Haibing Wang, Feihong Ye, Chen Tao, Guojia Fang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

88 Citations (Scopus)

Abstract

The open-circuit voltage deficit is one of the main limiting factors for the further performance improvement in planar structured perovskite solar cells. In this work, we elaborately develop chlorine binding on the surface of tin oxide electron transport layer for a high open-circuit voltage device (1.195 V). The chlorine passivation on SnO2 not only effectively mitigates the interfacial charge recombination between SnO2 and perovskite but also enhances the binding of chlorine with lead at the SnO2/perovskite interface. The chlorine-passivated SnO2 electron transport layer exhibits a better energy alignment with the perovskite layer and an improved electron mobility, which will promote efficient electron transfer at the interface. In addition, the elevated Fermi level of SnO2 electron transport layer increases carrier extraction and suppresses interfacial recombination, which is responsible for the open-circuit voltage enhancement. Planar perovskite solar cells with chlorine-passivated SnO2 exhibit a higher open-circuit voltage of 1.195 V than that of reference ones (1.135 V) for a lower band gap of 1.58 eV perovskite absorbers, which achieve a power conversion efficiency of 20% with negligible hysteresis.

Original languageEnglish
Pages (from-to)23152-23159
Number of pages8
JournalACS Applied Materials and Interfaces
Volume11
Issue number26
DOIs
Publication statusPublished - 3 Jul 2019
Externally publishedYes

Keywords

  • Chloride doping
  • Interfacial passivation
  • Open-circuit voltage
  • Perovskite solar cells
  • Tin oxide

ASJC Scopus subject areas

  • General Materials Science

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