Accurate modeling of lossy silicon substrate for on-chip inductors and transformers design

X. Huo, Kevin J. Chen, Howard Luong, Philip Ching Ho Chan

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

7 Citations (Scopus)


A physical based lumped element model is developed for lossy silicon Substrate considering both electric loss and eddy current loss induced by the substrate. Simplified ladder structure is used to accurate model the skin effect of the high conductivity silicon substrate. Good agreement with full wave solver is obtained for inductors on different resistivity silicon substrates.
Original languageEnglish
Title of host publicationIEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
Number of pages4
Publication statusPublished - 20 Sep 2004
Externally publishedYes
EventDigest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Fort Worth, TX, United States
Duration: 6 Jun 20048 Jun 2004


ConferenceDigest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Country/TerritoryUnited States
CityFort Worth, TX


  • Eddy currents
  • Inductor model
  • On-chip inductors
  • Skin effect
  • Substrate loss

ASJC Scopus subject areas

  • Engineering(all)

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