Abstract
Among various transition metal dichalcogenides, MoTe2has drawn attention due to its capability of robust phase engineering between semiconducting (2H) and semi-metallic distorted octahedral (1T') phase. In particular, 1T'-MoTe2has been predicted to have intriguing physics such as quantum spin Hall insulator, large magnetoresistance, and superconductivity. Recent progress showed weak antilocalization behavior in 1T'-MoTe2which is the one of representative characteristics in topological insulator. Here, we grow centimeter-scale monolayer 1T'-MoTe2on SiO2/Si substrate via chemical vapordeposition and demonstrate dichroism in visible range. Ribbon-like 1T'-MoTe2flakes were initially nucleated randomly on SiO2substrate and at a later stage merged to form a continuous monolayer film over the entire substrate. Each flake revealed one dimensional Mo-Modimerization feature and anisotropic absorption behavior in visible range (400-600 nm). This allowed us to detect the grain boundary due to stark contrast difference among flakes in different orientations.
Original language | English |
---|---|
Article number | 031010 |
Journal | 2D Materials |
Volume | 3 |
Issue number | 3 |
DOIs | |
Publication status | Published - 8 Sept 2016 |
Externally published | Yes |
Keywords
- Absorption dichroism
- Chemical vapor deposition
- MoTe 2
- Transition metal dichalcogenides
ASJC Scopus subject areas
- General Chemistry
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering