Above 1% efficiency of a ferroelectric solar cell based on the Pb(Zr,Ti)O3film

Fengang Zheng, Yu Xin, Wen Huang, Jinxing Zhang, Xiaofeng Wang, Mingrong Shen, Wen Dong, Liang Fang, Yongbin Bai, Xiaoqing Shen, Jianhua Hao

Research output: Journal article publicationJournal articleAcademic researchpeer-review

82 Citations (Scopus)


Pb(Zr,Ti)O3(PZT) film with a band gap of 3.6 eV was prepared on In2O3:Sn (ITO) coated glass, and then an amorphous silicon (a-Si) film with a narrow band gap of 1.8 eV was deposited on the PZT/ITO/glass. The short-circuit current of Ag/a-Si/PZT/ITO/glass sample is 2.56 mA cm-2, about 50 times greater than that of Pt/PZT/ITO/glass sample. The energy level of the a-Si film is well matched with that of PZT film, which is beneficial to the transport of UV-visible light-induced charges in the Ag/a-Si/PZT/ITO/glass sample. The photovoltaic output can be tuned by changing the dopant type of the a-Si film, and the maximum photoelectric conversion efficiency is measured to be up to 1.25% in the PZT film with an n-type a-Si film (phosphorus doped).
Original languageEnglish
Pages (from-to)1363-1368
Number of pages6
JournalJournal of Materials Chemistry A
Issue number5
Publication statusPublished - 7 Feb 2014

ASJC Scopus subject areas

  • Chemistry(all)
  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)


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