Above 1% efficiency of a ferroelectric solar cell based on the Pb(Zr,Ti)O3film

Fengang Zheng; Yu Xin; Wen Huang; Jinxing Zhang; Xiaofeng Wang; Mingrong Shen; Wen Dong; Liang Fang; Yongbin Bai; Xiaoqing Shen; Jianhua Hao

doi:10.1039/c3ta13724d

Above 1% efficiency of a ferroelectric solar cell based on the Pb(Zr,Ti)O₃film

Fengang Zheng, Yu Xin, Wen Huang, Jinxing Zhang, Xiaofeng Wang, Mingrong Shen, Wen Dong, Liang Fang, Yongbin Bai, Xiaoqing Shen, Jianhua Hao

Research output: Journal article publication › Journal article › Academic research › peer-review

94 Citations (Scopus)

Abstract

Pb(Zr,Ti)O3(PZT) film with a band gap of 3.6 eV was prepared on In2O3:Sn (ITO) coated glass, and then an amorphous silicon (a-Si) film with a narrow band gap of 1.8 eV was deposited on the PZT/ITO/glass. The short-circuit current of Ag/a-Si/PZT/ITO/glass sample is 2.56 mA cm-2, about 50 times greater than that of Pt/PZT/ITO/glass sample. The energy level of the a-Si film is well matched with that of PZT film, which is beneficial to the transport of UV-visible light-induced charges in the Ag/a-Si/PZT/ITO/glass sample. The photovoltaic output can be tuned by changing the dopant type of the a-Si film, and the maximum photoelectric conversion efficiency is measured to be up to 1.25% in the PZT film with an n-type a-Si film (phosphorus doped).

Original language	English
Pages (from-to)	1363-1368
Number of pages	6
Journal	Journal of Materials Chemistry A
Volume	2
Issue number	5
DOIs	https://doi.org/10.1039/c3ta13724d
Publication status	Published - 7 Feb 2014

ASJC Scopus subject areas

General Chemistry
Renewable Energy, Sustainability and the Environment
General Materials Science

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

More information

10.1039/c3ta13724d

Cite this

@article{aa311c3d65bf46eda4cd813c65c43005,

title = "Above 1% efficiency of a ferroelectric solar cell based on the Pb(Zr,Ti)O3film",

abstract = "Pb(Zr,Ti)O3(PZT) film with a band gap of 3.6 eV was prepared on In2O3:Sn (ITO) coated glass, and then an amorphous silicon (a-Si) film with a narrow band gap of 1.8 eV was deposited on the PZT/ITO/glass. The short-circuit current of Ag/a-Si/PZT/ITO/glass sample is 2.56 mA cm-2, about 50 times greater than that of Pt/PZT/ITO/glass sample. The energy level of the a-Si film is well matched with that of PZT film, which is beneficial to the transport of UV-visible light-induced charges in the Ag/a-Si/PZT/ITO/glass sample. The photovoltaic output can be tuned by changing the dopant type of the a-Si film, and the maximum photoelectric conversion efficiency is measured to be up to 1.25% in the PZT film with an n-type a-Si film (phosphorus doped).",

author = "Fengang Zheng and Yu Xin and Wen Huang and Jinxing Zhang and Xiaofeng Wang and Mingrong Shen and Wen Dong and Liang Fang and Yongbin Bai and Xiaoqing Shen and Jianhua Hao",

year = "2014",

month = feb,

day = "7",

doi = "10.1039/c3ta13724d",

language = "English",

volume = "2",

pages = "1363--1368",

journal = "Journal of Materials Chemistry A",

issn = "2050-7488",

publisher = "Royal Society of Chemistry",

number = "5",

}

TY - JOUR

T1 - Above 1% efficiency of a ferroelectric solar cell based on the Pb(Zr,Ti)O3film

AU - Zheng, Fengang

AU - Xin, Yu

AU - Huang, Wen

AU - Zhang, Jinxing

AU - Wang, Xiaofeng

AU - Shen, Mingrong

AU - Dong, Wen

AU - Fang, Liang

AU - Bai, Yongbin

AU - Shen, Xiaoqing

AU - Hao, Jianhua

PY - 2014/2/7

Y1 - 2014/2/7

N2 - Pb(Zr,Ti)O3(PZT) film with a band gap of 3.6 eV was prepared on In2O3:Sn (ITO) coated glass, and then an amorphous silicon (a-Si) film with a narrow band gap of 1.8 eV was deposited on the PZT/ITO/glass. The short-circuit current of Ag/a-Si/PZT/ITO/glass sample is 2.56 mA cm-2, about 50 times greater than that of Pt/PZT/ITO/glass sample. The energy level of the a-Si film is well matched with that of PZT film, which is beneficial to the transport of UV-visible light-induced charges in the Ag/a-Si/PZT/ITO/glass sample. The photovoltaic output can be tuned by changing the dopant type of the a-Si film, and the maximum photoelectric conversion efficiency is measured to be up to 1.25% in the PZT film with an n-type a-Si film (phosphorus doped).

AB - Pb(Zr,Ti)O3(PZT) film with a band gap of 3.6 eV was prepared on In2O3:Sn (ITO) coated glass, and then an amorphous silicon (a-Si) film with a narrow band gap of 1.8 eV was deposited on the PZT/ITO/glass. The short-circuit current of Ag/a-Si/PZT/ITO/glass sample is 2.56 mA cm-2, about 50 times greater than that of Pt/PZT/ITO/glass sample. The energy level of the a-Si film is well matched with that of PZT film, which is beneficial to the transport of UV-visible light-induced charges in the Ag/a-Si/PZT/ITO/glass sample. The photovoltaic output can be tuned by changing the dopant type of the a-Si film, and the maximum photoelectric conversion efficiency is measured to be up to 1.25% in the PZT film with an n-type a-Si film (phosphorus doped).

UR - http://www.scopus.com/inward/record.url?scp=84891396168&partnerID=8YFLogxK

U2 - 10.1039/c3ta13724d

DO - 10.1039/c3ta13724d

M3 - Journal article

SN - 2050-7488

VL - 2

SP - 1363

EP - 1368

JO - Journal of Materials Chemistry A

JF - Journal of Materials Chemistry A

IS - 5

ER -