A Wideband Millimeter-Wave GaN Low-Noise Amplifier Using Multi-Stage Feedback Compensation

Wei Huang; Xiaohu Fang; Wei Lin; Guanlong Huang; Xing Wang; Luyu Zhao

doi:10.1109/IMWS-AMP57814.2023.10381036

A Wideband Millimeter-Wave GaN Low-Noise Amplifier Using Multi-Stage Feedback Compensation

Wei Huang, Xiaohu Fang, Wei Lin, Guanlong Huang, Xing Wang, Luyu Zhao

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

This paper presents a 10 to 30 GHz wideband GaN low-noise amplifier (LNA) designed using a 0.15-μm gate-length gallium nitride (GaN) high electron-mobility transistor (HEMT) process. Through a drain-to-gate feedback compensation technique, the transistor gain roll-off is mitigated, and the gain flatness is significantly improved. With the above technique adopted for each stage of the proposed LNA, improved gain response, stability, and reduced design complexity are obtained under a slight penalty on the noise figure (NF). Full layout simulation results show that the designed LNA delivers a flat small signal gain of 22.8 to 26 dB with a NF of 2.17 dB to 2.73 dB over 10-30 GHz.

Original language	English
Title of host publication	IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-3
Number of pages	3
ISBN (Electronic)	9798350308761
DOIs	https://doi.org/10.1109/IMWS-AMP57814.2023.10381036
Publication status	Published - Nov 2023
Event	2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Chengdu, China Duration: 12 Nov 2023 → 15 Nov 2023

Publication series

Name	IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings

Conference

Conference	2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023
Country/Territory	China
City	Chengdu
Period	12/11/23 → 15/11/23

Keywords

feedback compensation
GaN high electron-mobility transistor
noise figure (NF)
Wideband low-noise amplifier (LNA)

ASJC Scopus subject areas

Radiation
Surfaces and Interfaces
Computer Networks and Communications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films
Instrumentation

More information

10.1109/IMWS-AMP57814.2023.10381036

Cite this

Huang, W., Fang, X., Lin, W., Huang, G., Wang, X., & Zhao, L. (2023). A Wideband Millimeter-Wave GaN Low-Noise Amplifier Using Multi-Stage Feedback Compensation. In IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings (pp. 1-3). Article 10381036 (IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMWS-AMP57814.2023.10381036

Huang, Wei ; Fang, Xiaohu ; Lin, Wei et al. / A Wideband Millimeter-Wave GaN Low-Noise Amplifier Using Multi-Stage Feedback Compensation. IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. pp. 1-3 (IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings).

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title = "A Wideband Millimeter-Wave GaN Low-Noise Amplifier Using Multi-Stage Feedback Compensation",

abstract = "This paper presents a 10 to 30 GHz wideband GaN low-noise amplifier (LNA) designed using a 0.15-μm gate-length gallium nitride (GaN) high electron-mobility transistor (HEMT) process. Through a drain-to-gate feedback compensation technique, the transistor gain roll-off is mitigated, and the gain flatness is significantly improved. With the above technique adopted for each stage of the proposed LNA, improved gain response, stability, and reduced design complexity are obtained under a slight penalty on the noise figure (NF). Full layout simulation results show that the designed LNA delivers a flat small signal gain of 22.8 to 26 dB with a NF of 2.17 dB to 2.73 dB over 10-30 GHz.",

keywords = "feedback compensation, GaN high electron-mobility transistor, noise figure (NF), Wideband low-noise amplifier (LNA)",

author = "Wei Huang and Xiaohu Fang and Wei Lin and Guanlong Huang and Xing Wang and Luyu Zhao",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 ; Conference date: 12-11-2023 Through 15-11-2023",

year = "2023",

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Huang, W, Fang, X, Lin, W, Huang, G, Wang, X & Zhao, L 2023, A Wideband Millimeter-Wave GaN Low-Noise Amplifier Using Multi-Stage Feedback Compensation. in IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings., 10381036, IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 1-3, 2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023, Chengdu, China, 12/11/23. https://doi.org/10.1109/IMWS-AMP57814.2023.10381036

A Wideband Millimeter-Wave GaN Low-Noise Amplifier Using Multi-Stage Feedback Compensation. / Huang, Wei; Fang, Xiaohu; Lin, Wei et al.
IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. p. 1-3 10381036 (IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings).

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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AU - Huang, Wei

AU - Fang, Xiaohu

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AU - Huang, Guanlong

AU - Wang, Xing

AU - Zhao, Luyu

PY - 2023/11

Y1 - 2023/11

N2 - This paper presents a 10 to 30 GHz wideband GaN low-noise amplifier (LNA) designed using a 0.15-μm gate-length gallium nitride (GaN) high electron-mobility transistor (HEMT) process. Through a drain-to-gate feedback compensation technique, the transistor gain roll-off is mitigated, and the gain flatness is significantly improved. With the above technique adopted for each stage of the proposed LNA, improved gain response, stability, and reduced design complexity are obtained under a slight penalty on the noise figure (NF). Full layout simulation results show that the designed LNA delivers a flat small signal gain of 22.8 to 26 dB with a NF of 2.17 dB to 2.73 dB over 10-30 GHz.

AB - This paper presents a 10 to 30 GHz wideband GaN low-noise amplifier (LNA) designed using a 0.15-μm gate-length gallium nitride (GaN) high electron-mobility transistor (HEMT) process. Through a drain-to-gate feedback compensation technique, the transistor gain roll-off is mitigated, and the gain flatness is significantly improved. With the above technique adopted for each stage of the proposed LNA, improved gain response, stability, and reduced design complexity are obtained under a slight penalty on the noise figure (NF). Full layout simulation results show that the designed LNA delivers a flat small signal gain of 22.8 to 26 dB with a NF of 2.17 dB to 2.73 dB over 10-30 GHz.

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T3 - IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings

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Y2 - 12 November 2023 through 15 November 2023

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Huang W, Fang X, Lin W, Huang G, Wang X, Zhao L. A Wideband Millimeter-Wave GaN Low-Noise Amplifier Using Multi-Stage Feedback Compensation. In IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2023. p. 1-3. 10381036. (IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings). doi: 10.1109/IMWS-AMP57814.2023.10381036

A Wideband Millimeter-Wave GaN Low-Noise Amplifier Using Multi-Stage Feedback Compensation

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