A three-terminal soi gated varactor for rf applications

F. P.S. Hui; W. M.Y. Wong; Z. Chen; J. Lau; Philip Ching Ho Chan; P. K. Ko

doi:10.1109/16.902729

A three-terminal soi gated varactor for rf applications

F. P.S. Hui
, W. M.Y. Wong
, Z. Chen
, J. Lau
, Philip Ching Ho Chan
, P. K. Ko

Research output: Journal article publication › Journal article › Academic research › peer-review

19 Citations (Scopus)

Abstract

This paper presents a new CMOS compatible SOI gated varactor for use in rf ICs. With its additional third terminal, the device offers an exceptional large tuning range and a good quality factor. The result of the MEDICI simulation of the structure of the varactor has been confirmed with measured data. A VCO circuit that can potentially exploits the three-terminal property is also reported.

Original language	English
Pages (from-to)	289-293
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	2
DOIs	https://doi.org/10.1109/16.902729
Publication status	Published - 1 Dec 2001
Externally published	Yes

Keywords

Passive components
Rf, soi
Varactor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

More information

10.1109/16.902729

Cite this

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abstract = "This paper presents a new CMOS compatible SOI gated varactor for use in rf ICs. With its additional third terminal, the device offers an exceptional large tuning range and a good quality factor. The result of the MEDICI simulation of the structure of the varactor has been confirmed with measured data. A VCO circuit that can potentially exploits the three-terminal property is also reported.",

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AU - Chan, Philip Ching Ho

AU - Ko, P. K.

PY - 2001/12/1

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N2 - This paper presents a new CMOS compatible SOI gated varactor for use in rf ICs. With its additional third terminal, the device offers an exceptional large tuning range and a good quality factor. The result of the MEDICI simulation of the structure of the varactor has been confirmed with measured data. A VCO circuit that can potentially exploits the three-terminal property is also reported.

AB - This paper presents a new CMOS compatible SOI gated varactor for use in rf ICs. With its additional third terminal, the device offers an exceptional large tuning range and a good quality factor. The result of the MEDICI simulation of the structure of the varactor has been confirmed with measured data. A VCO circuit that can potentially exploits the three-terminal property is also reported.

KW - Passive components

KW - Rf, soi

KW - Varactor

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DO - 10.1109/16.902729

M3 - Journal article

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A three-terminal soi gated varactor for rf applications

Abstract

Keywords

ASJC Scopus subject areas

More information

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