This paper presents a new CMOS compatible SOI gated varactor for use in rf ICs. With its additional third terminal, the device offers an exceptional large tuning range and a good quality factor. The result of the MEDICI simulation of the structure of the varactor has been confirmed with measured data. A VCO circuit that can potentially exploits the three-terminal property is also reported.
- Passive components
- Rf, soi
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering