A three-terminal soi gated varactor for rf applications

F. P.S. Hui; W. M.Y. Wong; Z. Chen; J. Lau; Philip Ching Ho Chan; P. K. Ko

doi:10.1109/16.902729

A three-terminal soi gated varactor for rf applications

F. P.S. Hui, W. M.Y. Wong, Z. Chen, J. Lau, Philip Ching Ho Chan, P. K. Ko

Research output: Journal article publication › Journal article › Academic research › peer-review

19 Citations (Scopus)

Abstract

This paper presents a new CMOS compatible SOI gated varactor for use in rf ICs. With its additional third terminal, the device offers an exceptional large tuning range and a good quality factor. The result of the MEDICI simulation of the structure of the varactor has been confirmed with measured data. A VCO circuit that can potentially exploits the three-terminal property is also reported.

Original language	English
Pages (from-to)	289-293
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	2
DOIs	https://doi.org/10.1109/16.902729
Publication status	Published - 1 Dec 2001
Externally published	Yes

Keywords

Passive components
Rf, soi
Varactor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

More information

10.1109/16.902729

Cite this

@article{9b32c1f6e0694389a5fa2a8f90de666a,

title = "A three-terminal soi gated varactor for rf applications",

abstract = "This paper presents a new CMOS compatible SOI gated varactor for use in rf ICs. With its additional third terminal, the device offers an exceptional large tuning range and a good quality factor. The result of the MEDICI simulation of the structure of the varactor has been confirmed with measured data. A VCO circuit that can potentially exploits the three-terminal property is also reported.",

keywords = "Passive components, Rf, soi, Varactor",

author = "Hui, {F. P.S.} and Wong, {W. M.Y.} and Z. Chen and J. Lau and Chan, {Philip Ching Ho} and Ko, {P. K.}",

year = "2001",

month = dec,

day = "1",

doi = "10.1109/16.902729",

language = "English",

volume = "48",

pages = "289--293",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE",

number = "2",

}

TY - JOUR

T1 - A three-terminal soi gated varactor for rf applications

AU - Hui, F. P.S.

AU - Wong, W. M.Y.

AU - Chen, Z.

AU - Lau, J.

AU - Chan, Philip Ching Ho

AU - Ko, P. K.

PY - 2001/12/1

Y1 - 2001/12/1

N2 - This paper presents a new CMOS compatible SOI gated varactor for use in rf ICs. With its additional third terminal, the device offers an exceptional large tuning range and a good quality factor. The result of the MEDICI simulation of the structure of the varactor has been confirmed with measured data. A VCO circuit that can potentially exploits the three-terminal property is also reported.

AB - This paper presents a new CMOS compatible SOI gated varactor for use in rf ICs. With its additional third terminal, the device offers an exceptional large tuning range and a good quality factor. The result of the MEDICI simulation of the structure of the varactor has been confirmed with measured data. A VCO circuit that can potentially exploits the three-terminal property is also reported.

KW - Passive components

KW - Rf, soi

KW - Varactor

UR - http://www.scopus.com/inward/record.url?scp=0035249841&partnerID=8YFLogxK

U2 - 10.1109/16.902729

DO - 10.1109/16.902729

M3 - Journal article

SN - 0018-9383

VL - 48

SP - 289

EP - 293

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 2

ER -

A three-terminal soi gated varactor for rf applications

Abstract

Keywords

ASJC Scopus subject areas

More information

Other files and links

Fingerprint

Cite this