A three-terminal soi gated varactor for rf applications

F. P.S. Hui, W. M.Y. Wong, Z. Chen, J. Lau, Philip Ching Ho Chan, P. K. Ko

Research output: Journal article publicationJournal articleAcademic researchpeer-review

19 Citations (Scopus)


This paper presents a new CMOS compatible SOI gated varactor for use in rf ICs. With its additional third terminal, the device offers an exceptional large tuning range and a good quality factor. The result of the MEDICI simulation of the structure of the varactor has been confirmed with measured data. A VCO circuit that can potentially exploits the three-terminal property is also reported.
Original languageEnglish
Pages (from-to)289-293
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number2
Publication statusPublished - 1 Dec 2001
Externally publishedYes


  • Passive components
  • Rf, soi
  • Varactor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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