Abstract
The present invention discloses a power metal-oxide-semiconductor field-effect transistor (MOSFET) diagnostic and lifetime estimation system and method, comprising the steps of: acquiring degradation data by conducting a degradation test; measuring potential failure precursors to provide early warning of failure 106; inspecting and diagnosing health condition of internal structure of the power MOSFET device using thermal transient measurement and scanning acoustic microscopy (SAM) images 108; repeating power cycling test 104 and the measurements of potential failure precursors until the precursors reach a corresponding failure threshold; and estimating remaining lifetime of the power MOSFET device using an artificial intelligence (AI) algorithm.
| Original language | English |
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| Patent number | HK30094384 |
| Filing date | 1/11/23 |
| Publication status | Published - 20 Sept 2024 |