A Subthreshold Conduction Model for Circuit Simulation of Submicron MOSFET

Philip Ching Ho Chan, Ralph Liu, Stephen K. Lau, Mario Pinto-Guedes

Research output: Journal article publicationJournal articleAcademic researchpeer-review

11 Citations (Scopus)


A circuit simulation model for subthreshold conduction of MOSFET is developed. This model employs a novel interpolation scheme to provide smooth transition from the subthreshold region to the above-threshold region. This interpolation scheme ensures that both channel current and its derivatives (or conductances) are smooth. Since an interpolation scheme is used, a simple, independent, and physically based model can be used for the subthreshold and the above-threshold region. The model is applied to subthreshold conduction for submicron MOSFET. It is also successfully installed in a circuit simulation program.
Original languageEnglish
Pages (from-to)574-581
Number of pages8
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Issue number4
Publication statusPublished - 1 Jan 1987
Externally publishedYes

ASJC Scopus subject areas

  • Computer Graphics and Computer-Aided Design
  • Software
  • Electrical and Electronic Engineering
  • Computational Theory and Mathematics
  • Computer Science Applications
  • Hardware and Architecture


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