A study on the electrical characteristics of copper phthalocyanine-based OTFTs with ZrTaO as gate dielectric

Wing Man Tang, M. G. Helander, M. T. Greiner, J. Qiu, Z. H. Lu, W. T. Ng

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

Copper phthalocyanine-based organic thin-film transistors (OTFTs) using ZrTaO high-k gate dielectric with different Ta contents have been fabricated and characterized. It is found that devices with more Ta incorporated in the dielectric film exhibit better electrical properties such as smaller leakage current density, larger breakdown field strength, smaller sub-threshold slope and larger on/off ratio. The involved mechanism lies in that increasing Ta concentration can reduce the interfacial trap density and increase the formation of Al-O bonds in interfacial layer resulting in better interface properties.
Original languageEnglish
Title of host publication2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs
Publication statusPublished - 23 Dec 2013
Event2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, Hong Kong
Duration: 3 Jun 20135 Jun 2013

Conference

Conference2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
CountryHong Kong
CityHong Kong
Period3/06/135/06/13

Keywords

  • CuPc
  • High-k dielectric ZrTaO
  • OTFT

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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