A study on the electrical characteristics of copper phthalocyanine-based OTFTs with ZrTaO as gate dielectric

Wing Man Tang; M. G. Helander; M. T. Greiner; J. Qiu; Z. H. Lu; W. T. Ng

doi:10.1109/EDSSC.2013.6628119

A study on the electrical characteristics of copper phthalocyanine-based OTFTs with ZrTaO as gate dielectric

Wing Man Tang, M. G. Helander, M. T. Greiner, J. Qiu, Z. H. Lu, W. T. Ng

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

Copper phthalocyanine-based organic thin-film transistors (OTFTs) using ZrTaO high-k gate dielectric with different Ta contents have been fabricated and characterized. It is found that devices with more Ta incorporated in the dielectric film exhibit better electrical properties such as smaller leakage current density, larger breakdown field strength, smaller sub-threshold slope and larger on/off ratio. The involved mechanism lies in that increasing Ta concentration can reduce the interfacial trap density and increase the formation of Al-O bonds in interfacial layer resulting in better interface properties.

Original language	English
Title of host publication	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs	https://doi.org/10.1109/EDSSC.2013.6628119
Publication status	Published - 23 Dec 2013
Event	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, Hong Kong Duration: 3 Jun 2013 → 5 Jun 2013

Conference

Conference	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
Country/Territory	Hong Kong
City	Hong Kong
Period	3/06/13 → 5/06/13

Keywords

CuPc
High-k dielectric ZrTaO
OTFT

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

More information

10.1109/EDSSC.2013.6628119

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title = "A study on the electrical characteristics of copper phthalocyanine-based OTFTs with ZrTaO as gate dielectric",

abstract = "Copper phthalocyanine-based organic thin-film transistors (OTFTs) using ZrTaO high-k gate dielectric with different Ta contents have been fabricated and characterized. It is found that devices with more Ta incorporated in the dielectric film exhibit better electrical properties such as smaller leakage current density, larger breakdown field strength, smaller sub-threshold slope and larger on/off ratio. The involved mechanism lies in that increasing Ta concentration can reduce the interfacial trap density and increase the formation of Al-O bonds in interfacial layer resulting in better interface properties.",

keywords = "CuPc, High-k dielectric ZrTaO, OTFT",

author = "Tang, {Wing Man} and Helander, {M. G.} and Greiner, {M. T.} and J. Qiu and Lu, {Z. H.} and Ng, {W. T.}",

year = "2013",

month = dec,

day = "23",

doi = "10.1109/EDSSC.2013.6628119",

language = "English",

isbn = "9781467325233",

booktitle = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013",

note = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 ; Conference date: 03-06-2013 Through 05-06-2013",

}

Tang, WM, Helander, MG, Greiner, MT, Qiu, J, Lu, ZH & Ng, WT 2013, A study on the electrical characteristics of copper phthalocyanine-based OTFTs with ZrTaO as gate dielectric. in 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013., 6628119, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, Hong Kong, Hong Kong, 3/06/13. https://doi.org/10.1109/EDSSC.2013.6628119

A study on the electrical characteristics of copper phthalocyanine-based OTFTs with ZrTaO as gate dielectric. / Tang, Wing Man; Helander, M. G.; Greiner, M. T. et al.
2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013. 6628119.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - A study on the electrical characteristics of copper phthalocyanine-based OTFTs with ZrTaO as gate dielectric

AU - Tang, Wing Man

AU - Helander, M. G.

AU - Greiner, M. T.

AU - Qiu, J.

AU - Lu, Z. H.

AU - Ng, W. T.

PY - 2013/12/23

Y1 - 2013/12/23

N2 - Copper phthalocyanine-based organic thin-film transistors (OTFTs) using ZrTaO high-k gate dielectric with different Ta contents have been fabricated and characterized. It is found that devices with more Ta incorporated in the dielectric film exhibit better electrical properties such as smaller leakage current density, larger breakdown field strength, smaller sub-threshold slope and larger on/off ratio. The involved mechanism lies in that increasing Ta concentration can reduce the interfacial trap density and increase the formation of Al-O bonds in interfacial layer resulting in better interface properties.

AB - Copper phthalocyanine-based organic thin-film transistors (OTFTs) using ZrTaO high-k gate dielectric with different Ta contents have been fabricated and characterized. It is found that devices with more Ta incorporated in the dielectric film exhibit better electrical properties such as smaller leakage current density, larger breakdown field strength, smaller sub-threshold slope and larger on/off ratio. The involved mechanism lies in that increasing Ta concentration can reduce the interfacial trap density and increase the formation of Al-O bonds in interfacial layer resulting in better interface properties.

KW - CuPc

KW - High-k dielectric ZrTaO

KW - OTFT

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U2 - 10.1109/EDSSC.2013.6628119

DO - 10.1109/EDSSC.2013.6628119

M3 - Conference article published in proceeding or book

SN - 9781467325233

BT - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

T2 - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Y2 - 3 June 2013 through 5 June 2013

ER -

A study on the electrical characteristics of copper phthalocyanine-based OTFTs with ZrTaO as gate dielectric

Abstract

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Keywords

ASJC Scopus subject areas

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