A study on la incorporation in transition-metal (Y, Zr, and Nb) oxides as gate dielectric of pentacene organic thin-film transistor

Chuan Yu Han, Wing Man Tang, Cheung Hoi Leung, Chi Ming Che, Peter T. Lai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

14 Citations (Scopus)

Abstract

The effects of La incorporation in three transition-metal (TM = Y, Zr, and Nb) oxides as gate dielectric of pentacene organic thin-film transistor (OTFT) have been investigated. La incorporated in Zr oxide and Nb oxide greatly decreases their trap density (as confirmed by low-frequency noise measurement) by passivating their oxygen vacancies, resulting in larger pentacene grains grown on them (as shown by atomic force microscopy) and thus higher carrier mobility for the OTFT due to less grain-boundary scattering. The carrier mobility of the ZrLaO- and NbLaO-OTFTs is about 70 times and 300 times higher than that of their counterparts based on ZrO2and Nb2O5, respectively. However, La incorporated in Y2O3increases its trap density by roughening its surface, causing smaller pentacene grains grown and thus lower carrier mobility. On the other hand, all the three TM elements incorporated in La2O3can result in more moisture-resistant gate dielectric with smoother surface, resulting in larger pentacene grains grown and thus higher carrier mobility for the OTFT.
Original languageEnglish
Article number7120096
Pages (from-to)2313-2319
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume62
Issue number7
DOIs
Publication statusPublished - 1 Jul 2015

Keywords

  • High-κ gate dielectric
  • La incorporation
  • low-frequency noise (LFN)
  • organic thin-film transistor (OTFT)
  • transition-metal (TM) oxides

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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