Abstract
An alternative approach to high performance polymeric rectifiers based on p-type polymer poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) and an n-type zinc oxide (ZnO) films is demonstrated. It is evident that nanoscale grain compatibility at an interface does not ensure that the device has the highest performance, but only a prerequisite for the two materials to exhibit the interaction. Being a non-invasive probe, Raman spectroscopy is used to monitor the degree of interaction between PEDOT:PSS and ZnO films. High performance of devices is achieved by the control of grain matching and more essentially, by the strong interaction of molecules at the interface. The developed PEDOT:PSS/ZnO diode can rectify an incoming a.c. voltage signal at frequencies up to 18 MHz. Operating with a low turn-on voltage, the diode has a current density of 220 mAcm2and a rectification ratio of 4000 in the open atmosphere which are higher than previously reported polymer/inorganic vertical diodes.
Original language | English |
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Pages (from-to) | 1725-1728 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 150 |
Issue number | 37-38 |
DOIs | |
Publication status | Published - 1 Oct 2010 |
Keywords
- A. PEDOT
- A. ZnO
- B. Diode
- E. Raman
ASJC Scopus subject areas
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry